- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Gain | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
17,430
In-stock
|
Infineon Technologies | RF MOSFET Transistors RF MOSFETS | SMD/SMT | SOT-343 | + 150 C | Reel | Si | N-Channel | 10 V | 40 mA | 23 dB | |||||
|
|
5,681
In-stock
|
Infineon Technologies | RF MOSFET Transistors Silicon N-Channel MOSFET Triode | SMD/SMT | SOT-23 | + 150 C | Reel | Si | N-Channel | 20 V | 30 A | ||||||
|
|
11,112
In-stock
|
Infineon Technologies | RF MOSFET Transistors N-CH 12 V 30 mA | SMD/SMT | SOT-143 | + 150 C | Reel | Si | N-Channel | 12 V | 30 mA | ||||||
|
|
3,649
In-stock
|
Infineon Technologies | RF MOSFET Transistors Silicon N-Channel MOSFET Tetrode 5V | SMD/SMT | SOT-143 | + 150 C | Reel | 200 mW | Si | N-Channel | 8 V | 40 mA | 1 GHz | ||||
|
|
VIEW | Infineon Technologies | RF MOSFET Transistors RF MOSFETS | SMD/SMT | SOT-363 | + 150 C | Reel | Si | N-Channel | 12 V | 25 mA | 24 dB | |||||
|
|
VIEW | Infineon Technologies | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | SMD/SMT | PG-SON-10 | + 150 C | Reel | 8 W | Si | N-Channel | 65 V | 100 mA | 17 dB | ||||
|
|
VIEW | Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 70 W 1805-1880 M... | SMD/SMT | H-37265-2 | + 150 C | Reel | 70 W | Si | N-Channel | 65 V | 550 mA | 125 mOhms | 16.5 dB | |||
|
|
VIEW | Infineon Technologies | RF MOSFET Transistors RF MOSFETS | SMD/SMT | SOT-363 | + 150 C | Reel | Si | N-Channel | 12 V | 25 mA | 24 dB | |||||
|
|
VIEW | Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 2110-2170 ... | SMD/SMT | H-36260-2 | + 150 C | Reel | 200 W | Si | N-Channel | 65 V | 1.6 A | 50 mOhms | 15.8 dB | |||
|
|
VIEW | Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 1930-1990 ... | SMD/SMT | H-36248-2 | + 150 C | Reel | 100 W | Si | N-Channel | 65 V | 900 mA | 50 mOhms | 17 dB | |||
|
|
VIEW | Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 2110-2170 ... | SMD/SMT | H-37260-2 | + 150 C | Reel | 200 W | Si | N-Channel | 65 V | 1.6 A | 50 mOhms | 15.8 dB | |||
|
|
VIEW | Infineon Technologies | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | SMD/SMT | H-36248-2 | + 150 C | Tray | 100 W | Si | N-Channel | 65 V | 900 mA | 50 mOhms | 17 dB | |||
|
|
VIEW | Infineon Technologies | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | SMD/SMT | H-36260-2 | + 150 C | Tray | 200 W | Si | N-Channel | 65 V | 1.6 A | 50 mOhms | 15.8 dB | |||
|
|
VIEW | Infineon Technologies | RF MOSFET Transistors RF LDMOS FETs 340W 30V 1930-1990 MH... | SMD/SMT | H-37275-6-2 | + 150 C | Tray | 100 W | Si | N-Channel | 65 V | 2.6 A | 19 dB | ||||
|
|
VIEW | Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 120 W 920-960 M... | SMD/SMT | H-37248-2 | + 150 C | Reel | 120 W | Si | N-Channel | 65 V | 750 mA | 0.07 Ohms at 10 V | 19 dB | |||
|
|
VIEW | Infineon Technologies | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | SMD/SMT | H-37260-2 | + 150 C | Tray | 55 W | Si | N-Channel | 65 V | 1.85 A | 0.04 Ohms at 10 V | 18.5 dB | |||
|
|
|
11,930
In-stock
|
Infineon Technologies | RF MOSFET Transistors Silicon N Channel MOSFET Tetrode | SMD/SMT | SOT-143 | + 150 C | Reel | Si | N-Channel | 8 V | 40 mA | ||||||
|
|
12,042
In-stock
|
Infineon Technologies | RF MOSFET Transistors Silicon N-Channel MOSFET Tetrode | SMD/SMT | SOT-143 | + 150 C | Reel | 200 mW | Si | N-Channel | 8 V | 25 mA | 1 GHz | ||||
|
|
VIEW | Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 220 W 920-960 M... | SMD/SMT | H-37260-2 | + 150 C | Reel | 55 W | Si | N-Channel | 65 V | 1.85 A | 0.04 Ohms at 10 V | 18.5 dB |
