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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Gain | |
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240
In-stock
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MACOM | RF MOSFET Transistors 5-400MHz 5 Watts 28Volt Gain 11dB | SMD/SMT | Case 211-07 | + 150 C | Tray | 5 W | Si | N-Channel | 65 V | 900 mA | 11 dB | ||||
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VIEW | NXP Semiconductors | RF MOSFET Transistors Power LDMOS transistor | SMD/SMT | SOT-502B-3 | Reel | Si | 65 V | 900 mA | 100 mOhms | ||||||||
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VIEW | NXP Semiconductors | RF MOSFET Transistors Power LDMOS transistor | SMD/SMT | SOT-502B-3 | Tube | Si | 65 V | 900 mA | 100 mOhms | ||||||||
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VIEW | NXP Semiconductors | RF MOSFET Transistors Power LDMOS transistor | SMD/SMT | SOT-502A-3 | Reel | Si | 65 V | 900 mA | 100 mOhms | ||||||||
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VIEW | NXP Semiconductors | RF MOSFET Transistors Power LDMOS transistor | SMD/SMT | SOT-502A-3 | Tube | Si | 65 V | 900 mA | 100 mOhms | ||||||||
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VIEW | Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 1930-1990 ... | SMD/SMT | H-36248-2 | + 150 C | Reel | 100 W | Si | N-Channel | 65 V | 900 mA | 50 mOhms | 17 dB | ||||
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VIEW | Infineon Technologies | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | SMD/SMT | H-36248-2 | + 150 C | Tray | 100 W | Si | N-Channel | 65 V | 900 mA | 50 mOhms | 17 dB |