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Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Gain
3SK292(TE85R,F)
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RFQ
4,417
In-stock
Toshiba RF MOSFET Transistors RF High Freq VHF/UHF SMQ 4-Pin N-C... SMD/SMT SMQ-4 + 125 C Reel Si N-Channel 12.5 V 30 mA 26 dB
BF 998 E6327
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RFQ
11,112
In-stock
Infineon Technologies RF MOSFET Transistors N-CH 12 V 30 mA SMD/SMT SOT-143 + 150 C Reel Si N-Channel 12 V 30 mA  
3SK294(TE85L,F)
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RFQ
4,132
In-stock
Toshiba RF MOSFET Transistors RF High Freq VHF/UHF SMQ 4-Pin N-C... SMD/SMT SOT-343-4 + 125 C Reel Si N-Channel 12.5 V 30 mA 26 dB
3SK291(TE85L,F)
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RFQ
3,181
In-stock
Toshiba RF MOSFET Transistors N-Ch High Freq 30mA 0.15W 12.5V SMD/SMT SOT-24-4   Reel Si N-Channel 12.5 V 30 mA 22.5 dB
3SK293(TE85L,F)
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RFQ
2,366
In-stock
Toshiba RF MOSFET Transistors N-Ch High Freq 30mA 0.1W 12.5V SMD/SMT SOT-343-4   Reel Si N-Channel 12.5 V 30 mA 22.5 dB
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