Build a global manufacturer and supplier trusted trading platform.
Packaging :
Output Power :
Vds - Drain-Source Breakdown Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Gain
PD57018-E
GET PRICE
RFQ
97
In-stock
STMicroelectronics RF MOSFET Transistors POWER RF Transistor SMD/SMT PowerSO-10RF (Formed Lead) + 150 C Tube 18 W Si N-Channel 65 V 2.5 A 760 mOhms 16.5 dB at 945 MHz
PD55003-E
GET PRICE
RFQ
400
In-stock
STMicroelectronics RF MOSFET Transistors RF POWER TRANS SMD/SMT PowerSO-10RF (Formed Lead) + 150 C Tube 3 W Si N-Channel 40 V 2.5 A   17 dB at 500 MHz
PD55003TR-E
VIEW
RFQ
STMicroelectronics RF MOSFET Transistors POWER R.F. SMD/SMT PowerSO-10RF (Formed Lead) + 150 C Reel 3 W Si N-Channel 40 V 2.5 A   17 dB at 500 MHz
PD57018TR-E
VIEW
RFQ
STMicroelectronics RF MOSFET Transistors POWER R.F. SMD/SMT PowerSO-10RF (Formed Lead) + 150 C Reel 18 W Si N-Channel 65 V 2.5 A 760 mOhms 16.5 dB at 945 MHz
Page 1 / 1