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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Gain | |
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11
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Microsemi | RF MOSFET Transistors RF MOSFET (VDMOS) | Through Hole | TO-247-3 | + 150 C | 300 W | Si | N-Channel | 1 kV | 13 A | 1 Ohms | 16 dB |
