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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Gain | |
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VIEW | Infineon Technologies | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | SMD/SMT | H-37260-2 | + 150 C | Tray | 55 W | Si | N-Channel | 65 V | 1.85 A | 0.04 Ohms at 10 V | 18.5 dB | |||
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VIEW | Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 220 W 920-960 M... | SMD/SMT | H-37260-2 | + 150 C | Reel | 55 W | Si | N-Channel | 65 V | 1.85 A | 0.04 Ohms at 10 V | 18.5 dB |
