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10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Gain | |
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496
In-stock
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Freescale / NXP | RF MOSFET Transistors MV9 UHF 13.6V | SMD/SMT | TO-270-2 | + 150 C | Reel | 33 W | Si | N-Channel | - 0.5 V, + 40 V | 19 dB | |||||
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50
In-stock
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Freescale / NXP | RF MOSFET Transistors AF 1.8GHZ 230W NI780S-6 | SMD/SMT | NI-780S-6 | + 150 C | Reel | 50 W | Si | N-Channel | - 500 mV, + 65 V | 1.8 A | 19 dB | ||||
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GET PRICE |
165
In-stock
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Freescale / NXP | RF MOSFET Transistors MV9 UHF 13.6V | SMD/SMT | TO-270-2 Gull | Reel | Si | - 0.5 V, + 40 V | 19 dB | ||||||||
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VIEW | NXP Semiconductors | RF MOSFET Transistors Power LDMOS transistor | SMD/SMT | SOT-502B-3 | + 225 C | Tube | Si | 65 V | 1.3 A | 69 mOhms | 19 dB | ||||||
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VIEW | NXP Semiconductors | RF MOSFET Transistors Power LDMOS transistor | SMD/SMT | SOT-502A-3 | + 225 C | Tube | Si | 65 V | 1.3 A | 69 mOhms | 19 dB | ||||||
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VIEW | NXP Semiconductors | RF MOSFET Transistors Power LDMOS transistor | SMD/SMT | SOT-502B-3 | + 225 C | Reel | Si | 65 V | 1.3 A | 69 mOhms | 19 dB | ||||||
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VIEW | NXP Semiconductors | RF MOSFET Transistors Power LDMOS transistor | SMD/SMT | SOT-502A-3 | + 225 C | Reel | Si | 65 V | 1.3 A | 69 mOhms | 19 dB | ||||||
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VIEW | NXP Semiconductors | RF MOSFET Transistors 2.4-2.5GHz 65V 19dB | SMD/SMT | SOT-975A-2 | Reel | 12 W | Si | 65 V | 10 mA | 1.3 Ohms | 19 dB | ||||||
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VIEW | Infineon Technologies | RF MOSFET Transistors RF LDMOS FETs 340W 30V 1930-1990 MH... | SMD/SMT | H-37275-6-2 | + 150 C | Tray | 100 W | Si | N-Channel | 65 V | 2.6 A | 19 dB | |||||
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VIEW | Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 120 W 920-960 M... | SMD/SMT | H-37248-2 | + 150 C | Reel | 120 W | Si | N-Channel | 65 V | 750 mA | 0.07 Ohms at 10 V | 19 dB |