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Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance
BF1205C,115
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NXP Semiconductors RF MOSFET Transistors TAPE-7 MOS-RFSS SMD/SMT SOT-363-6 + 150 C Reel Si N-Channel 6 V, 6 V 30 mA, 30 mA -
BF1102R,115
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RFQ
NXP Semiconductors RF MOSFET Transistors TAPE-7 MOS-RFSS SMD/SMT SOT-363-6 + 150 C Reel Si N-Channel 7 V, 7 V 40 mA, 40 mA -
BF1102R,135
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RFQ
NXP Semiconductors RF MOSFET Transistors Dual N-Channel 7V 40mA 200mW SMD/SMT SOT-363-6   Reel Si Dual N-Channel 7 V, 7 V 40 mA, 40 mA -
Default Photo
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Infineon Technologies RF MOSFET Transistors RF MOSFETS   SOT-363-6   Reel Si        
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