semiconductors-Integrated Circuits - ICs - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Series	Packaging	Number of Channels	Length	Width	Height	Pd - Power Dissipation	Configuration	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Channel Mode	Rise Time	Fall Time	Transistor Type	Package	Typical Turn-Off Delay Time	Typical Turn-On Delay Time	Installation style	Factory packaging quantity	unit weight	Factory Pack Quantity	RoHS	Id - Continuous Drain Curren	Id-continuous drain current	Rds On-drain source on-resistance	Pd-power dissipation	Typical shutdown delay time	Typical on-delay time	Widt
	FDS6986S		GET PRICE	PDF RFQ	11,150 In-stock	onsemi	MOSFET 30V Dual SyncFET	16 V, 20 V	SMD/SMT	SO-8	- 55 C	+ 150 C		Cut Tape	2 Channel	4.9 mm	3.9 mm	1.75 mm	2 W	Dual	Si	N-Channel	30 V	6.5 A	29 mOhms	Enhancement	4.5 ns, 5 ns	2.5 ns, 11 ns	2 N-Channel		20 ns, 25 ns	7 ns, 8 ns				2500
	ISL9N310AS3		GET PRICE	PDF RFQ	24,907 In-stock	onsemi	MOSFET N-Ch LL UltraFET PWM Optimized	20 V			- 55 C	+ 175 C	ISL9N310		1 Channel	10.29 mm		7.88 mm		Single	Si	N-Channel				Enhancement	52 ns	36 ns	1 N-Channel	Tube			Through Hole	50	2.387 g				62 A	15 mOhms	70 W	39 ns	11 ns	4.83 mm
	FDQ7238S		GET PRICE	PDF RFQ	22,500 In-stock	onsemi	MOSFET N-Channel PowerTrench	16 V			- 55 C	+ 150 C			2 Channel	8.6 mm	3.9 mm	1.45 mm		Dual	Si	N-Channel				Enhancement		13 ns		Reel			SMD/SMT	2500	338 mg				14 A	7 mOhms	2.4 W	28 ns, 51 ns	11 ns, 14 ns
	HUF76143S3		GET PRICE	PDF RFQ	50,000 In-stock	onsemi	MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch	16 V	Through Hole		- 40 C	+ 150 C		Tube	1 Channel	6.8 mm	2.5 mm	6.3 mm	225 W	Single	Si	N-Channel	30 V		5.5 mOhms	Enhancement	145 ns, 55 ns	18 ns	1 N-Channel		30 ns, 40 ns	22 ns, 14 ns			0.084199 oz	50	N	75 A

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