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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Configuration | Transistor Polarity | Gain Bandwidth Product fT | Product Type | Package | Product Category | Installation style | Factory packaging quantity | Pd-power dissipation | Collector-emitter maximum voltage VCEO | Emitter - base voltage VEBO | Collector continuous current | DC Collector / Base Gain hfe Min | |
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10,000
In-stock
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Toshiba | Silicon NPN Triple Diffused Type Power Amplifier Applications | Triple | NPN | 30 MHz | BJTs - Bipolar Transistors | Reel | Bipolar Transistor - Bipolar Junction Transistor (BJT) | Through Hole | 2000 | 100 W | 140 V | 5 V | 10 A | 55 |
