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Configuration :
Gain Bandwidth Product fT :
Factory packaging quantity :
Pd-power dissipation :
Collector-emitter maximum voltage VCEO :
Collector - base voltage VCBO :
Emitter - base voltage VEBO :
Collector continuous current :
DC Collector / Base Gain hfe Min :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Maximum Operating Temperature Pd - Power Dissipation Configuration Transistor Polarity Collector- Emitter Voltage VCEO Max Collector- Base Voltage VCBO Emitter- Base Voltage VEBO Maximum DC Collector Current Gain Bandwidth Product fT DC Collector/Base Gain hfe Min Product Type Package Subcategory Product Category Installation style Factory packaging quantity unit weight RoHS Pd-power dissipation Collector-emitter maximum voltage VCEO Collector - base voltage VCBO Emitter - base voltage VEBO Collector continuous current DC Collector / Base Gain hfe Min DC current gain hFE maximum
2SC3709A
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RFQ
8,533
In-stock
Toshiba Semiconductor Bipolar Transistors - BJT + 150 C 30 W Single NPN 50 V 60 V 6 V 12 A 90 MHz 120     Transistors                        
2SC3423
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RFQ
7,850
In-stock
Toshiba Semiconductor Bipolar Transistors - Bipolar Junction Transistors (BJT) Pb-FF TO12...     Single NPN         200 MHz     Tube   Bipolar Transistor - Bipolar Junction Transistor (BJT) Through Hole 600     5 W 150 V 150 V 5 V 50 mA 80 240
2SC4834
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RFQ
13,500
In-stock
Shindengen Bipolar Transistor - Bipolar Junction Transistor (BJT) + 150 C     NPN       8 A 13 MHz   BJTs - Bipolar Transistors   Transistors   Through Hole 50 2.300 g N 45 W 400 V 500 V 7 V 8 A    
2SC5198
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RFQ
10,000
In-stock
Toshiba Silicon NPN Triple Diffused Type Power Amplifier Applications     Triple NPN         30 MHz   BJTs - Bipolar Transistors Cut Tape   Bipolar Transistor - Bipolar Junction Transistor (BJT) Through Hole 2000     100 W 140 V   5 V 10 A 55  
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