- Manufacture :
- Configuration :
- Gain Bandwidth Product fT :
- Package :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Maximum DC Collector Current | Gain Bandwidth Product fT | DC Collector/Base Gain hfe Min | Product Type | Package | Subcategory | Product Category | Installation style | Factory packaging quantity | unit weight | RoHS | Pd-power dissipation | Collector-emitter maximum voltage VCEO | Collector - base voltage VCBO | Emitter - base voltage VEBO | Collector continuous current | DC Collector / Base Gain hfe Min | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
8,533
In-stock
|
Toshiba Semiconductor | Bipolar Transistors - BJT | + 150 C | 30 W | Single | NPN | 50 V | 60 V | 6 V | 12 A | 90 MHz | 120 | Transistors | |||||||||||||||
|
|
GET PRICE |
13,500
In-stock
|
Shindengen | Bipolar Transistor - Bipolar Junction Transistor (BJT) | + 150 C | NPN | 8 A | 13 MHz | BJTs - Bipolar Transistors | Transistors | Through Hole | 50 | 2.300 g | N | 45 W | 400 V | 500 V | 7 V | 8 A | |||||||||||
|
|
GET PRICE |
10,000
In-stock
|
Toshiba | Silicon NPN Triple Diffused Type Power Amplifier Applications | Triple | NPN | 30 MHz | BJTs - Bipolar Transistors | MouseReel | Bipolar Transistor - Bipolar Junction Transistor (BJT) | Through Hole | 2000 | 100 W | 140 V | 5 V | 10 A | 55 |
