semiconductors-Integrated Circuits - ICs

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PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Minimum Operating Temperature	Maximum Operating Temperature	Series	Number of Channels	Length	Width	Height	Configuration	Technology	Transistor Polarity	Channel Mode	Rise Time	Fall Time	Transistor Type	Package	Product Category	Installation style	Factory packaging quantity	unit weight	Vds-drain source breakdown voltage	Id-continuous drain current	Rds On-drain source on-resistance	Pd-power dissipation	Typical shutdown delay time	Typical on-delay time	Widt
2SK2232	GET PRICE	PDF RFQ	7,855 In-stock	Toshiba Semiconductor	MOSFET N-Ch 60V 25A Rdson 0.046 Ohm					1 Channel	10 mm	4.5 mm	15 mm	Single	Si	N-Channel							Through Hole	50		60 V	25 A	46 mOhms
ISL9N310AS3	GET PRICE	PDF RFQ	24,907 In-stock	onsemi	MOSFET N-Ch LL UltraFET PWM Optimized	20 V	- 55 C	+ 175 C	ISL9N310	1 Channel	10.29 mm		7.88 mm	Single	Si	N-Channel	Enhancement	52 ns	36 ns	1 N-Channel	Tube		Through Hole	50	2.387 g	30 V	62 A	15 mOhms	70 W	39 ns	11 ns	4.83 mm
2SK170-BL	GET PRICE	PDF RFQ	50,000 In-stock	Toshiba Semiconductor	JFET TO-92 FET(LF),DISCON(07-10)/PHASE-OUT(10-01)/OBS...									Single		N-Channel						JFET	Through Hole	200	453.600 mg		12 mA

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