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Factory packaging quantity :
Vds-drain source breakdown voltage :
Id-continuous drain current :
Rds On-drain source on-resistance :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Minimum Operating Temperature Maximum Operating Temperature Series Number of Channels Length Width Height Configuration Technology Transistor Polarity Channel Mode Rise Time Fall Time Transistor Type Package Product Category Installation style Factory packaging quantity unit weight Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time Widt
2SK2232
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RFQ
7,855
In-stock
Toshiba Semiconductor MOSFET N-Ch 60V 25A Rdson 0.046 Ohm         1 Channel 10 mm 4.5 mm 15 mm Single Si N-Channel             Through Hole 50   60 V 25 A 46 mOhms        
ISL9N310AS3
Per Unit
$1.700
RFQ
24,907
In-stock
onsemi MOSFET N-Ch LL UltraFET PWM Optimized 20 V - 55 C + 175 C ISL9N310 1 Channel 10.29 mm   7.88 mm Single Si N-Channel Enhancement 52 ns 36 ns 1 N-Channel Tube   Through Hole 50 2.387 g 30 V 62 A 15 mOhms 70 W 39 ns 11 ns 4.83 mm
2SK170-BL
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RFQ
50,000
In-stock
Toshiba Semiconductor JFET TO-92 FET(LF),DISCON(07-10)/PHASE-OUT(10-01)/OBS...                 Single   N-Channel           JFET Through Hole 200 453.600 mg   12 mA          
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