semiconductors-Integrated Circuits - ICs

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Minimum Operating Temperature	Maximum Operating Temperature	Series	Number of Channels	Length	Width	Height	Configuration	Technology	Transistor Polarity	Channel Mode	Rise Time	Fall Time	Transistor Type	Package	Installation style	Factory packaging quantity	unit weight	Vds-drain source breakdown voltage	Id-continuous drain current	Rds On-drain source on-resistance	Pd-power dissipation	Typical shutdown delay time	Typical on-delay time	Widt
	2SK2232		GET PRICE	PDF RFQ	7,855 In-stock	Toshiba Semiconductor	MOSFET N-Ch 60V 25A Rdson 0.046 Ohm					1 Channel	10 mm	4.5 mm	15 mm	Single	Si	N-Channel						Through Hole	50		60 V	25 A	46 mOhms
	ISL9N310AS3	Per Unit $1.700		PDF RFQ	24,907 In-stock	onsemi	MOSFET N-Ch LL UltraFET PWM Optimized	20 V	- 55 C	+ 175 C	ISL9N310	1 Channel	10.29 mm		7.88 mm	Single	Si	N-Channel	Enhancement	52 ns	36 ns	1 N-Channel	Tube	Through Hole	50	2.387 g	30 V	62 A	15 mOhms	70 W	39 ns	11 ns	4.83 mm

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