- Maximum Operating Temperature :
- Number of Channels :
- Length :
- Height :
- Configuration :
- Installation style :
- unit weight :
- Rds On-drain source on-resistance :
- Typical shutdown delay time :
- Typical on-delay time :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Minimum Operating Temperature | Maximum Operating Temperature | Series | Number of Channels | Length | Width | Height | Configuration | Technology | Transistor Polarity | Channel Mode | Rise Time | Fall Time | Transistor Type | Package | Installation style | Factory packaging quantity | unit weight | Vds-drain source breakdown voltage | Id-continuous drain current | Rds On-drain source on-resistance | Pd-power dissipation | Typical shutdown delay time | Typical on-delay time | Widt | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
24,907
In-stock
|
onsemi | MOSFET N-Ch LL UltraFET PWM Optimized | 20 V | - 55 C | + 175 C | ISL9N310 | 1 Channel | 10.29 mm | 7.88 mm | Single | Si | N-Channel | Enhancement | 52 ns | 36 ns | 1 N-Channel | Tube | Through Hole | 50 | 2.387 g | 30 V | 62 A | 15 mOhms | 70 W | 39 ns | 11 ns | 4.83 mm | |||
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|
GET PRICE |
22,500
In-stock
|
onsemi | MOSFET N-Channel PowerTrench | 16 V | - 55 C | + 150 C | 2 Channel | 8.6 mm | 3.9 mm | 1.45 mm | Dual | Si | N-Channel | Enhancement | 13 ns | Reel | SMD/SMT | 2500 | 338 mg | 30 V | 14 A | 7 mOhms | 2.4 W | 28 ns, 51 ns | 11 ns, 14 ns |
