semiconductors-Integrated Circuits - ICs

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PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Product	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Length	Width	Height	Pd - Power Dissipation	Configuration	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Channel Mode	Rise Time	Fall Time	Transistor Type	Typical Turn-Off Delay Time	Typical Turn-On Delay Time	Subcategory	Product Category	unit weight	Factory Pack Quantity	RoHS	Id - Continuous Drain Curren
2SK2698	GET PRICE	PDF RFQ	7,128 In-stock	Toshiba Semiconductor	MOSFET N-Ch 500V 15A Rdson 0.4 Ohm			Through Hole	TO-3PN-3				1 Channel	15.5 mm	4.5 mm	20 mm		Single	Si	N-Channel	500 V	15 A	400 mOhms							MOSFETs			50
2SK2998	GET PRICE	PDF RFQ	8,755 In-stock	Toshiba Semiconductor	MOSFET	MOSFET Small Signal	30 V	Through Hole	TO-92-3	- 55 C	+ 150 C		1 Channel	5.1 mm	4.1 mm	8.2 mm	900 mW	Single	Si	N-Channel	500 V	500 mA	18 Ohms	Enhancement		11 ns
2SK3131	GET PRICE	PDF RFQ	23,511 In-stock	Toshiba Semiconductor	MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-...		30 V	Through Hole	TO-3PL-3	- 55 C	+ 150 C	Reel	1 Channel	20 mm	5 mm	26 mm	250 W	Single	Si	N-Channel	500 V	50 A	110 mOhms	Enhancement	105 ns	65 ns		51 ns	20 ns		MOSFET
HUF76143S3	GET PRICE	PDF RFQ	50,000 In-stock	onsemi	MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch		16 V	Through Hole		- 40 C	+ 150 C	Tube	1 Channel	6.8 mm	2.5 mm	6.3 mm	225 W	Single	Si	N-Channel	30 V		5.5 mOhms	Enhancement	145 ns, 55 ns	18 ns	1 N-Channel	30 ns, 40 ns	22 ns, 14 ns			0.084199 oz	50	N	75 A

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