semiconductors-Integrated Circuits - ICs - Kaimeite

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5 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Length	Width	Height	Pd - Power Dissipation	Configuration	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Channel Mode	Rise Time	Fall Time	Transistor Type	Typical Turn-Off Delay Time	Typical Turn-On Delay Time	Subcategory	Product Category	Factory Pack Quantity
	FDS6986S		GET PRICE	PDF RFQ	11,150 In-stock	onsemi	MOSFET 30V Dual SyncFET	16 V, 20 V	SMD/SMT	SO-8	- 55 C	+ 150 C	Cut Tape	2 Channel	4.9 mm	3.9 mm	1.75 mm	2 W	Dual	Si	N-Channel	30 V	6.5 A	29 mOhms		Enhancement	4.5 ns, 5 ns	2.5 ns, 11 ns	2 N-Channel	20 ns, 25 ns	7 ns, 8 ns			2500
	2SK2842		GET PRICE	PDF RFQ	6,551 In-stock	Toshiba Semiconductor	MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...	30 V	SMD/SMT	SC-62-3	- 55 C	+ 150 C	Reel	1 Channel	4.6 mm	2.5 mm	1.6 mm	40 W	Single	Si	N-Channel	500 V	12 A	520 mOhms		Enhancement	22 ns	36 ns	1 N-Channel					50
	TPCS8204		GET PRICE	PDF RFQ	45,000 In-stock	Toshiba Semiconductor	MOSFET	12 V	SMD/SMT	TSSOP-Advance-8	- 55 C	+ 150 C		2 Channel	3.65 mm	3.5 mm	0.75 mm	1.1 W	Dual	Si	N-Channel	20 V	6 A	17 mOhms		Enhancement	5 ns	10 ns
	SSM3K35FS(T5L,F,T)		GET PRICE	PDF RFQ	40,000 In-stock	Toshiba Semiconductor	MOSFET	4 V	SMD/SMT			+ 150 C		1 Channel	1.6 mm	0.8 mm	0.7 mm	100 mW	Single	Si	N-Channel	20 V	180 mA	3 Ohms	400 mV	Enhancement			1 N-Channel	300 ns	115 ns
	SSM6N15FU		GET PRICE	PDF RFQ	85,000 In-stock	Toshiba	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type		SMD/SMT					2 Channel	2 mm	1.25 mm	0.9 mm		Dual	Si	N-Channel								2 N-Channel			MOSFETs	MOSFET

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