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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Number of Channels Length Width Height Configuration Technology Transistor Polarity Installation style Factory packaging quantity Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance
2SK2232
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7,855
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Toshiba Semiconductor MOSFET N-Ch 60V 25A Rdson 0.046 Ohm 1 Channel 10 mm 4.5 mm 15 mm Single Si N-Channel Through Hole 50 60 V 25 A 46 mOhms
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