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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Rise Time Fall Time Transistor Type Package Typical Turn-Off Delay Time Typical Turn-On Delay Time Installation style Factory packaging quantity unit weight Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time
FDS6986S
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RFQ
11,150
In-stock
onsemi MOSFET 30V Dual SyncFET 16 V, 20 V SO-8 - 55 C + 150 C Cut Tape 2 Channel 4.9 mm 3.9 mm 1.75 mm 2 W Dual Si N-Channel 6.5 A 29 mOhms Enhancement 4.5 ns, 5 ns 2.5 ns, 11 ns 2 N-Channel   20 ns, 25 ns 7 ns, 8 ns                  
FDQ7238S
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RFQ
22,500
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onsemi MOSFET N-Channel PowerTrench 16 V   - 55 C + 150 C   2 Channel 8.6 mm 3.9 mm 1.45 mm   Dual Si N-Channel     Enhancement   13 ns   Reel     SMD/SMT 2500 338 mg 30 V 14 A 7 mOhms 2.4 W 28 ns, 51 ns 11 ns, 14 ns
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