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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Maximum Operating Temperature Pd - Power Dissipation Configuration Transistor Polarity Collector- Emitter Voltage VCEO Max Collector- Base Voltage VCBO Emitter- Base Voltage VEBO Maximum DC Collector Current Gain Bandwidth Product fT DC Collector/Base Gain hfe Min Subcategory
2SC3709A
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8,533
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Toshiba Semiconductor Bipolar Transistors - BJT + 150 C 30 W Single NPN 50 V 60 V 6 V 12 A 90 MHz 120 Transistors
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