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Vgs - Gate-Source Voltage :
Number of Channels :
Configuration :
Installation style :
Factory packaging quantity :
Vds-drain source breakdown voltage :
Id-continuous drain current :
Rds On-drain source on-resistance :
Pd-power dissipation :
Typical shutdown delay time :
Typical on-delay time :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Package / Case Minimum Operating Temperature Maximum Operating Temperature Number of Channels Length Width Height Configuration Technology Transistor Polarity Channel Mode Rise Time Fall Time Transistor Type Package Installation style Factory packaging quantity unit weight Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time Gate/source cutoff voltage Maximum drain/gate voltage
2SK209Y
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RFQ
22,553
In-stock
Toshiba Semiconductor RF-Mosfet-N-Channel-JFET-10V-500μA-1kHz-SC-59   SOT-346-3             Single   N-Channel         Cut Tape SMD/SMT 3000     14 mA   150 mW     -1.5V -50V
2SK2381
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RFQ
7,800
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Toshiba Semiconductor MOSFET 220NIS2 PLN, DISCON(08-10)/PHASE-OUT(11-01)/OB... 20 V TO-220FP-3 - 55 C + 150 C 1 Channel 10 mm 4.5 mm 15 mm Single Si N-Channel Enhancement 15 ns 15 ns   Reel Through Hole     200 V 5 A 800 mOhms 25 W 67 ns 41 ns    
2SK2750
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RFQ
23,356
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... 30 V   - 55 C + 150 C 1 Channel 10.16 mm 4.45 mm 15.1 mm Single Si N-Channel Enhancement 15 ns 15 ns 1 N-Channel Reel Through Hole     600 V 3.5 A 2.2 Ohms 35 W 8 ns 2 ns    
FDQ7238S
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RFQ
22,500
In-stock
onsemi MOSFET N-Channel PowerTrench 16 V   - 55 C + 150 C 2 Channel 8.6 mm 3.9 mm 1.45 mm Dual Si N-Channel Enhancement   13 ns   Reel SMD/SMT 2500 338 mg 30 V 14 A 7 mOhms 2.4 W 28 ns, 51 ns 11 ns, 14 ns    
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