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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Number of Channels | Length | Width | Height | Configuration | Technology | Transistor Polarity | Channel Mode | Fall Time | Package | Installation style | Factory packaging quantity | unit weight | Vds-drain source breakdown voltage | Id-continuous drain current | Rds On-drain source on-resistance | Pd-power dissipation | Typical shutdown delay time | Typical on-delay time | Gate/source cutoff voltage | Maximum drain/gate voltage | |
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GET PRICE |
22,553
In-stock
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Toshiba Semiconductor | RF-Mosfet-N-Channel-JFET-10V-500μA-1kHz-SC-59 | SOT-346-3 | Single | N-Channel | Cut Tape | SMD/SMT | 3000 | 14 mA | 150 mW | -1.5V | -50V | |||||||||||||||||
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22,500
In-stock
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onsemi | MOSFET N-Channel PowerTrench | 16 V | - 55 C | + 150 C | 2 Channel | 8.6 mm | 3.9 mm | 1.45 mm | Dual | Si | N-Channel | Enhancement | 13 ns | Reel | SMD/SMT | 2500 | 338 mg | 30 V | 14 A | 7 mOhms | 2.4 W | 28 ns, 51 ns | 11 ns, 14 ns |
