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Vgs - Gate-Source Voltage :
Configuration :
Transistor Polarity :
Vds-drain source breakdown voltage :
Id-continuous drain current :
Rds On-drain source on-resistance :
Pd-power dissipation :
Typical shutdown delay time :
Typical on-delay time :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Package / Case Minimum Operating Temperature Maximum Operating Temperature Number of Channels Length Width Height Configuration Technology Transistor Polarity Gain Bandwidth Product fT Channel Mode Rise Time Transistor Type Product Type Package Product Category Installation style Factory packaging quantity Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time Collector-emitter maximum voltage VCEO Emitter - base voltage VEBO Collector continuous current DC Collector / Base Gain hfe Min
2SK2381
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RFQ
7,800
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN, DISCON(08-10)/PHASE-OUT(11-01)/OB... 20 V TO-220FP-3 - 55 C + 150 C 1 Channel 10 mm 4.5 mm 15 mm Single Si N-Channel   Enhancement 15 ns     Reel   Through Hole   200 V 5 A 800 mOhms 25 W 67 ns 41 ns        
2SK2750
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RFQ
23,356
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... 30 V   - 55 C + 150 C 1 Channel 10.16 mm 4.45 mm 15.1 mm Single Si N-Channel   Enhancement 15 ns 1 N-Channel   Reel   Through Hole   600 V 3.5 A 2.2 Ohms 35 W 8 ns 2 ns        
2SC5198
Per Unit
$1.200
RFQ
10,000
In-stock
Toshiba Silicon NPN Triple Diffused Type Power Amplifier Applications                 Triple   NPN 30 MHz       BJTs - Bipolar Transistors Cut Tape Bipolar Transistor - Bipolar Junction Transistor (BJT) Through Hole 2000       100 W     140 V 5 V 10 A 55
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