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Vgs - Gate-Source Voltage :
Maximum Operating Temperature :
Number of Channels :
Configuration :
Installation style :
Factory packaging quantity :
Vds-drain source breakdown voltage :
Id-continuous drain current :
Rds On-drain source on-resistance :
Pd-power dissipation :
Typical shutdown delay time :
Typical on-delay time :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Vgs - Gate-Source Voltage Package / Case Minimum Operating Temperature Maximum Operating Temperature Number of Channels Tolerance Length Width Height Configuration Capacitance Technology Transistor Polarity Channel Mode Rise Time Fall Time Transistor Type Voltage Rating DC Product Type Dielectric Package Types of Product Category Installation style Factory packaging quantity unit weight Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time Capacitor-nF Capacitance -pF
2SK2381
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RFQ
7,800
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN, DISCON(08-10)/PHASE-OUT(11-01)/OB...   20 V TO-220FP-3 - 55 C + 150 C 1 Channel   10 mm 4.5 mm 15 mm Single   Si N-Channel Enhancement 15 ns 15 ns         Reel     Through Hole     200 V 5 A 800 mOhms 25 W 67 ns 41 ns    
2SK2750
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RFQ
23,356
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...   30 V   - 55 C + 150 C 1 Channel   10.16 mm 4.45 mm 15.1 mm Single   Si N-Channel Enhancement 15 ns 15 ns 1 N-Channel       Reel     Through Hole     600 V 3.5 A 2.2 Ohms 35 W 8 ns 2 ns    
ECHU1C103JX5
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RFQ
45,060
In-stock
Panasonics Film Capacitor 0.01uF 16VDC 5% PPS FILM 0805 Stacked Film Capacitors   0805 (2012 metric) - 55 C + 125 C   5 % 2 mm 1.25 mm 1.1 mm   0.01 uF             16 VDC Film Capacitors Polyphenylene Sulfide (PPS) Cut Tape Stacked Metallized Film Chip Capacitor Film capacitor   3000 5.500 mg             10 nF 10000 pF
FDQ7238S
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RFQ
22,500
In-stock
onsemi MOSFET N-Channel PowerTrench   16 V   - 55 C + 150 C 2 Channel   8.6 mm 3.9 mm 1.45 mm Dual   Si N-Channel Enhancement   13 ns         Reel     SMD/SMT 2500 338 mg 30 V 14 A 7 mOhms 2.4 W 28 ns, 51 ns 11 ns, 14 ns    
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