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Vgs - Gate-Source Voltage :
Installation style :
Vds-drain source breakdown voltage :
Id-continuous drain current :
Rds On-drain source on-resistance :
Pd-power dissipation :
Typical shutdown delay time :
Typical on-delay time :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Package / Case Minimum Operating Temperature Maximum Operating Temperature Number of Channels Length Width Height Configuration Technology Transistor Polarity Channel Mode Rise Time Transistor Type Package Installation style Factory packaging quantity Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time Gate/source cutoff voltage Maximum drain/gate voltage
2SK209Y
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RFQ
22,553
In-stock
Toshiba Semiconductor RF-Mosfet-N-Channel-JFET-10V-500μA-1kHz-SC-59   SOT-346-3             Single   N-Channel       Cut Tape SMD/SMT 3000   14 mA   150 mW     -1.5V -50V
2SK2381
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RFQ
7,800
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Toshiba Semiconductor MOSFET 220NIS2 PLN, DISCON(08-10)/PHASE-OUT(11-01)/OB... 20 V TO-220FP-3 - 55 C + 150 C 1 Channel 10 mm 4.5 mm 15 mm Single Si N-Channel Enhancement 15 ns   Reel Through Hole   200 V 5 A 800 mOhms 25 W 67 ns 41 ns    
2SK2750
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RFQ
23,356
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Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... 30 V   - 55 C + 150 C 1 Channel 10.16 mm 4.45 mm 15.1 mm Single Si N-Channel Enhancement 15 ns 1 N-Channel Reel Through Hole   600 V 3.5 A 2.2 Ohms 35 W 8 ns 2 ns    
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