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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Configuration Transistor Polarity Gain Bandwidth Product fT Product Type Package Product Category Installation style Factory packaging quantity Pd-power dissipation Collector-emitter maximum voltage VCEO Emitter - base voltage VEBO Collector continuous current DC Collector / Base Gain hfe Min
2SC5198
Per Unit
$1.200
RFQ
10,000
In-stock
Toshiba Silicon NPN Triple Diffused Type Power Amplifier Applications Triple NPN 30 MHz BJTs - Bipolar Transistors Cut Tape Bipolar Transistor - Bipolar Junction Transistor (BJT) Through Hole 2000 100 W 140 V 5 V 10 A 55
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