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Configuration :
Gain Bandwidth Product fT :
Factory packaging quantity :
Pd-power dissipation :
Collector continuous current :
DC Collector / Base Gain hfe Min :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Configuration Transistor Polarity Gain Bandwidth Product fT Product Type Package Product Category Installation style Factory packaging quantity Subcategory: Pd-power dissipation Collector-emitter maximum voltage VCEO Collector - base voltage VCBO Emitter - base voltage VEBO Collector continuous current DC Collector / Base Gain hfe Min DC current gain hFE maximum
2SC3423
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RFQ
7,850
In-stock
Toshiba Semiconductor Bipolar Transistors - Bipolar Junction Transistors (BJT) Pb-FF TO12... Single NPN 200 MHz   Tube Bipolar Transistor - Bipolar Junction Transistor (BJT) Through Hole 600   5 W 150 V 150 V 5 V 50 mA 80 240
2SC5353
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RFQ
6,500
In-stock
Toshiba Semiconductor Bipolar Transistor - Bipolar Junction Transistor (BJT)       BJTs - Bipolar Transistors   Bipolar Transistor - Bipolar Junction Transistor (BJT)     Transistors              
2SC5587
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RFQ
55,501
In-stock
Toshiba Semiconductor Bipolar Transistor - Bipolar Junction Transistor (BJT) TO-3PH-IS, ...       BJTs - Bipolar Transistors TO-220 Bipolar Transistor - Bipolar Junction Transistor (BJT)                    
2SC5411
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RFQ
12,920
In-stock
Toshiba Silicon NPN triple diffusion mesa type       BJTs - Bipolar Transistors TO-3PF Bipolar Transistor - Bipolar Junction Transistor (BJT)                    
2SC5198
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RFQ
10,000
In-stock
Toshiba Silicon NPN Triple Diffused Type Power Amplifier Applications Triple NPN 30 MHz BJTs - Bipolar Transistors Cut Tape Bipolar Transistor - Bipolar Junction Transistor (BJT) Through Hole 2000   100 W 140 V   5 V 10 A 55  
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