semiconductors-Integrated Circuits - ICs - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Minimum Operating Temperature	Maximum Operating Temperature	Series	Number of Channels	Length	Width	Height	Configuration	Technology	Transistor Polarity	Gain Bandwidth Product fT	Channel Mode	Input Type	Output Current per Channel	Ib - Input Bias Current	Vcm - Common Mode Voltage	CMRR - Common Mode Rejection Ratio	Voltage Gain dB	Amplifier Type	en - Input Voltage Noise Density	Rise Time	Fall Time	Transistor Type	Product Type	Package	Subcategory	Product Category	Power supply voltage - maximum	Power supply voltage - minimum	Installation style	Factory packaging quantity	unit weight	RoHS	GBP-gain bandwidth product	SR - Conversion rate	Vos - Input Bias Voltage	Working power supply current	Power type	Dual supply voltage	Maximum dual supply voltage	Minimum dual supply voltage	Vds-drain source breakdown voltage	Id-continuous drain current	Rds On-drain source on-resistance	Pd-power dissipation	Typical shutdown delay time	Typical on-delay time	Widt	Collector-emitter maximum voltage VCEO	Collector - base voltage VCBO	Emitter - base voltage VEBO	Collector continuous current	Humidity sensitivity	DC Collector / Base Gain hfe Min
	2SJ162		GET PRICE	PDF RFQ	8,555 In-stock	Renesas Electronics	MOSFET Power MOSFET										Si																Tube					Through Hole																							Yes
	2SK2232		GET PRICE	PDF RFQ	7,855 In-stock	Toshiba Semiconductor	MOSFET N-Ch 60V 25A Rdson 0.046 Ohm					1 Channel	10 mm	4.5 mm	15 mm	Single	Si	N-Channel																				Through Hole	50											60 V	25 A	46 mOhms
	ISL9N310AS3		GET PRICE	PDF RFQ	24,907 In-stock	onsemi	MOSFET N-Ch LL UltraFET PWM Optimized	20 V	- 55 C	+ 175 C	ISL9N310	1 Channel	10.29 mm		7.88 mm	Single	Si	N-Channel		Enhancement									52 ns	36 ns	1 N-Channel		Tube					Through Hole	50	2.387 g										30 V	62 A	15 mOhms	70 W	39 ns	11 ns	4.83 mm
	2SC4834		GET PRICE	PDF RFQ	13,500 In-stock	Shindengen	Bipolar Transistor - Bipolar Junction Transistor (BJT)			+ 150 C								NPN	13 MHz													BJTs - Bipolar Transistors		Transistors				Through Hole	50	2.300 g	N												45 W				400 V	500 V	7 V	8 A
	2SK170-BL		GET PRICE	PDF RFQ	50,000 In-stock	Toshiba Semiconductor	JFET TO-92 FET(LF),DISCON(07-10)/PHASE-OUT(10-01)/OBS...									Single		N-Channel																	JFET			Through Hole	200	453.600 mg											12 mA
	5962-8771001PA		GET PRICE	PDF RFQ	350 In-stock	Texas instruments	Operational Amplifiers - Op Amps DUAL OP AMP		- 55 C	+ 125 C		2 Channel	9.6 mm	6.67 mm	4.57 mm		Bipolar				Rail-to-Rail	30 mA	150 nA	Negative Rail to Positive Rail - 1.5 V	70 dB to 80 dB	100 dB	High Gain Amplifier	40 nV/sqrt Hz					Tube			32 V	3 V	Through Hole	1			700 kHz	0.3 V/us	5 mV	350 uA	Single, Dual	+/- 3 V, +/- 5 V, +/- 9 V	+/- 16 V	+/- 1.5 V
	2SC5198		GET PRICE	PDF RFQ	10,000 In-stock	Toshiba	Silicon NPN Triple Diffused Type Power Amplifier Applications									Triple		NPN	30 MHz													BJTs - Bipolar Transistors	Reel		Bipolar Transistor - Bipolar Junction Transistor (BJT)			Through Hole	2000														100 W				140 V		5 V	10 A		55

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