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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Vf - Forward Voltage Minimum Operating Temperature Maximum Operating Temperature If - Forward Current Length Width Height Configuration Ir - Reverse Current Ifsm - Forward Surge Current Technology Transistor Polarity Gain Bandwidth Product fT Product Type Package Types of Product Category Installation style Factory packaging quantity unit weight Pd-power dissipation range of working temperature Vrrm - Repeated reverse voltage Collector-emitter maximum voltage VCEO Emitter - base voltage VEBO Collector continuous current DC Collector / Base Gain hfe Min
12CWQ10FNTRPBF
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RFQ
15,600
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Vishay Semiconductors Schottky Diodes & Rectifiers 12 Amp 100 Volt Common Cathode Schottky Rectifiers 0.95 V - 55 C + 150 C 12 A 6.73 mm 6.22 mm 2.39 mm Dual Common Cathode 1000 uA 330 A Si     Schottky Diodes & Rectifiers   Schottky Diode Schottky diodes and rectifiers SMD/SMT 2000 300 mg   - 55 C to + 150 C 100 V        
2SC5198
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10,000
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Toshiba Silicon NPN Triple Diffused Type Power Amplifier Applications                 Triple       NPN 30 MHz BJTs - Bipolar Transistors Cut Tape   Bipolar Transistor - Bipolar Junction Transistor (BJT) Through Hole 2000   100 W     140 V 5 V 10 A 55
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