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Package / Case :
Minimum Operating Temperature :
Packaging :
Pd - Power Dissipation :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Series Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Tradename Rise Time Fall Time Transistor Type Typical Turn-Off Delay Time Typical Turn-On Delay Time Subcategory Product Category unit weight Factory Pack Quantity RoHS Id - Continuous Drain Curren
2SK2842
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RFQ
6,551
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... 30 V SMD/SMT SC-62-3 - 55 C + 150 C   Reel 1 Channel 4.6 mm 2.5 mm 1.6 mm 40 W Single Si N-Channel 500 V 12 A 520 mOhms Enhancement   22 ns 36 ns 1 N-Channel           50    
2SK2698
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RFQ
7,128
In-stock
Toshiba Semiconductor MOSFET N-Ch 500V 15A Rdson 0.4 Ohm   Through Hole TO-3PN-3         1 Channel 15.5 mm 4.5 mm 20 mm   Single Si N-Channel 500 V 15 A 400 mOhms               MOSFETs     50    
HUF76143S3
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RFQ
50,000
In-stock
ON Semiconductor MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch 16 V Through Hole   - 40 C + 150 C   Tube 1 Channel 6.8 mm 2.5 mm 6.3 mm 225 W Single Si N-Channel 30 V   5.5 mOhms Enhancement   145 ns, 55 ns 18 ns 1 N-Channel 30 ns, 40 ns 22 ns, 14 ns     0.084199 oz 50 N 75 A
SUP90N08-4M8P-E3
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RFQ
35,000
In-stock
Vishay MOSFET RECOMMENDED ALT 781-SUP85N10-10-E3           SUP Tube             Si           TrenchFET             MOSFET 0.211644 oz 50    
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