- Mounting Style :
- Package / Case :
- Length :
- Width :
- Height :
- Rds On - Drain-Source Resistance :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Length | Width | Height | Pd - Power Dissipation | Configuration | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Rise Time | Fall Time | Transistor Type | Subcategory | Factory Pack Quantity | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
6,551
In-stock
|
Toshiba Semiconductor | MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... | 30 V | SMD/SMT | SC-62-3 | - 55 C | + 150 C | Reel | 1 Channel | 4.6 mm | 2.5 mm | 1.6 mm | 40 W | Single | Si | N-Channel | 500 V | 12 A | 520 mOhms | Enhancement | 22 ns | 36 ns | 1 N-Channel | 50 | |||
|
|
GET PRICE |
7,128
In-stock
|
Toshiba Semiconductor | MOSFET N-Ch 500V 15A Rdson 0.4 Ohm | Through Hole | TO-3PN-3 | 1 Channel | 15.5 mm | 4.5 mm | 20 mm | Single | Si | N-Channel | 500 V | 15 A | 400 mOhms | MOSFETs | 50 |
