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Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Rise Time Fall Time Transistor Type Typical Turn-Off Delay Time Typical Turn-On Delay Time Subcategory unit weight Factory Pack Quantity RoHS Id - Continuous Drain Curren
2SK2698
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RFQ
7,128
In-stock
Toshiba Semiconductor MOSFET N-Ch 500V 15A Rdson 0.4 Ohm   Through Hole TO-3PN-3       1 Channel 15.5 mm 4.5 mm 20 mm   Single Si N-Channel 500 V 15 A 400 mOhms             MOSFETs   50    
HUF76143S3
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RFQ
50,000
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onsemi MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch 16 V Through Hole   - 40 C + 150 C Tube 1 Channel 6.8 mm 2.5 mm 6.3 mm 225 W Single Si N-Channel 30 V   5.5 mOhms Enhancement 145 ns, 55 ns 18 ns 1 N-Channel 30 ns, 40 ns 22 ns, 14 ns   0.084199 oz 50 N 75 A
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