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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Minimum Operating Temperature Maximum Operating Temperature Number of Channels Length Width Height Configuration Technology Transistor Polarity Channel Mode Rise Time Fall Time Installation style Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time
2SK2837
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RFQ
7,500
In-stock
Toshiba Semiconductor 30 V - 55 C + 150 C 1 Channel 15.5 mm 4.5 mm 20 mm Single Si N-Channel Enhancement 30 ns 50 ns Through Hole 500 V 20 A 270 mOhms 150 W 71 ns 23 ns
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