Build a global manufacturer and supplier trusted trading platform.
Id-continuous drain current :
Rds On-drain source on-resistance :
Typical shutdown delay time :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Minimum Operating Temperature Maximum Operating Temperature Number of Channels Length Width Height Configuration Technology Transistor Polarity Channel Mode Rise Time Fall Time Installation style Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time
2SK2699
GET PRICE
RFQ
13,555
In-stock
Toshiba Semiconductor MOSFET 30 V - 55 C + 150 C 1 Channel 15.5 mm 4.5 mm 20 mm Single Si N-Channel Enhancement 45 ns 65 ns Through Hole 600 V 12 A 650 mOhms 150 W 150 ns 35 ns
2SK2915
GET PRICE
RFQ
14,555
In-stock
Toshiba Semiconductor MOSFET 30 V - 55 C + 150 C 1 Channel 15.5 mm 4.5 mm 20 mm Single Si N-Channel Enhancement 50 ns 60 ns Through Hole 600 V 16 A 400 mOhms 150 W 155 ns 35 ns
Page 1 / 1