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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Series Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Rise Time Fall Time Transistor Type Package Installation style Factory packaging quantity unit weight Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time Widt
2SK2842
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RFQ
6,551
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Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... 30 V SMD/SMT SC-62-3 - 55 C + 150 C   Reel 1 Channel 4.6 mm 2.5 mm 1.6 mm 40 W Single Si N-Channel 500 V 12 A 520 mOhms Enhancement 22 ns 36 ns 1 N-Channel                      
ISL9N310AS3
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RFQ
24,907
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ON Semiconductor MOSFET N-Ch LL UltraFET PWM Optimized 20 V     - 55 C + 175 C ISL9N310   1 Channel 10.29 mm   7.88 mm   Single Si N-Channel       Enhancement 52 ns 36 ns 1 N-Channel Tube Through Hole 50 2.387 g 30 V 62 A 15 mOhms 70 W 39 ns 11 ns 4.83 mm
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