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9 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Maximum Operating Temperature Series Pd - Power Dissipation Configuration Technology Transistor Polarity Collector- Base Voltage VCBO Emitter- Base Voltage VEBO Collector-Emitter Saturation Voltage Gain Bandwidth Product fT DC Collector/Base Gain hfe Min Continuous Collector Current Product Type Package Subcategory Product Category Factory packaging quantity unit weight RoHS Pd-power dissipation Brand Collector-emitter maximum voltage VCEO Collector - base voltage VCBO Emitter - base voltage VEBO Collector continuous current DC Collector / Base Gain hfe Min DC Current Gain hFE Max
2SC5353
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RFQ
6,500
In-stock
Toshiba Semiconductor Bipolar Transistor - Bipolar Junction Transistor (BJT)                           BJTs - Bipolar Transistors     Bipolar Transistor - Bipolar Junction Transistor (BJT)                      
2SC5587
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RFQ
55,501
In-stock
Toshiba Semiconductor Bipolar Transistor - Bipolar Junction Transistor (BJT) TO-3PH-IS, ...                           BJTs - Bipolar Transistors TO-220   Bipolar Transistor - Bipolar Junction Transistor (BJT)                      
2SD2553
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RFQ
16,988
In-stock
Toshiba Semiconductor Bipolar Transistor - Bipolar Junction Transistor (BJT) TO-3PH-IS, ...                           BJTs - Bipolar Transistors   Transistors Bipolar Transistor - Bipolar Junction Transistor (BJT                      
FN1L3M-T2B-A
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RFQ
33,000
In-stock
Renesas Electronics Bipolar Transistors - BJT                           BJTs - Bipolar Transistors   Transistors Bipolar Transistors - BJT         Renesas Electronics            
2SC4834
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RFQ
13,500
In-stock
Shindengen Bipolar Transistor - Bipolar Junction Transistor (BJT)   + 150 C         NPN       13 MHz     BJTs - Bipolar Transistors   Transistors   50 2.300 g N 45 W   400 V 500 V 7 V 8 A    
2SA1986-O
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RFQ
4,500
In-stock
Toshiba Semiconductor Bipolar Transistor - Bipolar Junction Transistor (BJT)     2SA1986                     BJTs - Bipolar Transistors   Transistors                        
2SC5411
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RFQ
12,920
In-stock
Toshiba Silicon NPN triple diffusion mesa type                           BJTs - Bipolar Transistors TO-3PF   Bipolar Transistor - Bipolar Junction Transistor (BJT)                      
2SC5198
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RFQ
10,000
In-stock
Toshiba Silicon NPN Triple Diffused Type Power Amplifier Applications         Triple   NPN       30 MHz     BJTs - Bipolar Transistors Cut Tape   Bipolar Transistor - Bipolar Junction Transistor (BJT) 2000     100 W   140 V   5 V 10 A 55  
A1941
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RFQ
8,623
In-stock
Toshiba Through Hole + 150 C   100 W Single Si PNP - 140 V - 5 V 2 V 30 MHz 35 10 A BJTs - Bipolar Transistors       4000                   83
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