- Configuration :
- Package :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Technology | Transistor Polarity | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | DC Collector/Base Gain hfe Min | Continuous Collector Current | Product Type | Package | Product Category | Factory packaging quantity | Collector-emitter maximum voltage VCEO | Emitter - base voltage VEBO | DC Collector / Base Gain hfe Min | DC Current Gain hFE Max | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
10,000
In-stock
|
Toshiba | Silicon NPN Triple Diffused Type Power Amplifier Applications | Triple | NPN | 30 MHz | BJTs - Bipolar Transistors | Cut Tape | Bipolar Transistor - Bipolar Junction Transistor (BJT) | 2000 | 140 V | 5 V | 55 | ||||||||||||
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GET PRICE |
8,623
In-stock
|
Toshiba | Through Hole | + 150 C | 100 W | Single | Si | PNP | - 140 V | - 5 V | 2 V | 30 MHz | 35 | 10 A | BJTs - Bipolar Transistors | 4000 | 83 |
