- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Rise Time :
- Transistor Type :
- Typical Turn-Off Delay Time :
- Typical Turn-On Delay Time :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Vf - Forward Voltage | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Packaging | Number of Channels | Length | Width | Height | Pd - Power Dissipation | Configuration | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | Output Type | Isolation Voltage | Maximum Collector Emitter Voltage | Maximum Collector Current | Maximum Collector Emitter Saturation Voltage | Current Transfer Ratio | Rise Time | Fall Time | Transistor Type | Product Type | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Subcategory | Product Category | Factory packaging quantity | trademark | Vds-drain source breakdown voltage | Id-continuous drain current | Rds On-drain source on-resistance | |
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GET PRICE |
6,551
In-stock
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Toshiba Semiconductor | MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... | 30 V | SMD/SMT | SC-62-3 | - 55 C | + 150 C | Reel | 1 Channel | 4.6 mm | 2.5 mm | 1.6 mm | 40 W | Single | Si | N-Channel | 500 V | 12 A | 520 mOhms | Enhancement | 22 ns | 36 ns | 1 N-Channel | |||||||||||||||||||||||
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GET PRICE |
7,128
In-stock
|
Toshiba Semiconductor | MOSFET N-Ch 500V 15A Rdson 0.4 Ohm | Through Hole | TO-3PN-3 | 1 Channel | 15.5 mm | 4.5 mm | 20 mm | Single | Si | N-Channel | 500 V | 15 A | 400 mOhms | MOSFETs | |||||||||||||||||||||||||||||||
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GET PRICE |
24,500
In-stock
|
Toshiba Semiconductor | Transistor Output Optocouplers AC input 80V 3750Vrms | 1.3 V | SMD/SMT | SOP-4 | - 55 C | + 100 C | TLP180 | 1 Channel | 3.6 mm | 4.4 mm | 2.5 mm | 200 mW | 1 Channel | NPN Phototransistor | 3750 Vrms | 80 V | 50 mA | 0.2 V | 600 % | Transistor Output Optocouplers | Transistor Output Optocouplers | ||||||||||||||||||||||||
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17,500
In-stock
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Toshiba Semiconductor | MOSFET | 1 Channel | 2.9 mm | 1.5 mm | 1.1 mm | Single | Si | P-Channel | 1 P-Channel | ||||||||||||||||||||||||||||||||||||
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GET PRICE |
23,351
In-stock
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Toshiba Semiconductor | MOSFET | 1 Channel | Single | Si | N-Channel | 1 N-Channel | Toshiba | ||||||||||||||||||||||||||||||||||||||
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17,735
In-stock
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Toshiba Semiconductor | MOSFET | 1 Channel | Single | Si | N-Channel | ||||||||||||||||||||||||||||||||||||||||
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7,855
In-stock
|
Toshiba Semiconductor | MOSFET N-Ch 60V 25A Rdson 0.046 Ohm | 1 Channel | 10 mm | 4.5 mm | 15 mm | Single | Si | N-Channel | 50 | 60 V | 25 A | 46 mOhms | |||||||||||||||||||||||||||||||||
|
GET PRICE |
4,199
In-stock
|
Toshiba Semiconductor | MOSFET 220SM PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(1... | 1 Channel | Single | Si | N-Channel | MOSFET | |||||||||||||||||||||||||||||||||||||||
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GET PRICE |
7,335
In-stock
|
Toshiba Semiconductor | MOSFET MOLD PLN,ACTIVE,DISCON(05-04)/PHASE-OUT(... | PW-Mold-3 | 1 Channel | 6.5 mm | 5.5 mm | 2.3 mm | Single | Si | N-Channel | 1 N-Channel | MOSFETs | ||||||||||||||||||||||||||||||||||
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8,755
In-stock
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Toshiba Semiconductor | MOSFET | MOSFET Small Signal | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | 1 Channel | 5.1 mm | 4.1 mm | 8.2 mm | 900 mW | Single | Si | N-Channel | 500 V | 500 mA | 18 Ohms | Enhancement | 11 ns | |||||||||||||||||||||||||
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GET PRICE |
23,511
In-stock
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Toshiba Semiconductor | MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-... | 30 V | Through Hole | TO-3PL-3 | - 55 C | + 150 C | Reel | 1 Channel | 20 mm | 5 mm | 26 mm | 250 W | Single | Si | N-Channel | 500 V | 50 A | 110 mOhms | Enhancement | 105 ns | 65 ns | 51 ns | 20 ns | MOSFET | |||||||||||||||||||||
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GET PRICE |
40,000
In-stock
|
Toshiba Semiconductor | MOSFET | 4 V | SMD/SMT | + 150 C | 1 Channel | 1.6 mm | 0.8 mm | 0.7 mm | 100 mW | Single | Si | N-Channel | 20 V | 180 mA | 3 Ohms | 400 mV | Enhancement | 1 N-Channel | 300 ns | 115 ns |