semiconductors-Integrated Circuits - ICs

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Series	Packaging	Number of Channels	Length	Width	Height	Pd - Power Dissipation	Configuration	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Channel Mode	Rise Time	Fall Time	Transistor Type	Package	Installation style	Factory packaging quantity	unit weight	Vds-drain source breakdown voltage	Id-continuous drain current	Rds On-drain source on-resistance	Pd-power dissipation	Typical shutdown delay time	Typical on-delay time	Widt
	2SK2842		GET PRICE	PDF RFQ	6,551 In-stock	Toshiba Semiconductor	MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...	30 V	SMD/SMT	SC-62-3	- 55 C	+ 150 C		Reel	1 Channel	4.6 mm	2.5 mm	1.6 mm	40 W	Single	Si	N-Channel	500 V	12 A	520 mOhms	Enhancement	22 ns	36 ns	1 N-Channel
	ISL9N310AS3		GET PRICE	PDF RFQ	24,907 In-stock	onsemi	MOSFET N-Ch LL UltraFET PWM Optimized	20 V			- 55 C	+ 175 C	ISL9N310		1 Channel	10.29 mm		7.88 mm		Single	Si	N-Channel				Enhancement	52 ns	36 ns	1 N-Channel	Tube	Through Hole	50	2.387 g	30 V	62 A	15 mOhms	70 W	39 ns	11 ns	4.83 mm

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