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Vgs - Gate-Source Voltage :
Package / Case :
Pd - Power Dissipation :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Channel Mode Rise Time Fall Time Transistor Type Typical Turn-Off Delay Time Typical Turn-On Delay Time Subcategory Factory Pack Quantity trademark
2SK2842
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RFQ
6,551
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... 30 V SMD/SMT SC-62-3 - 55 C + 150 C Reel 1 Channel 4.6 mm 2.5 mm 1.6 mm 40 W Single Si N-Channel 500 V 12 A 520 mOhms   Enhancement 22 ns 36 ns 1 N-Channel       50  
2SK941
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RFQ
23,351
In-stock
Toshiba Semiconductor MOSFET             1 Channel         Single Si N-Channel               1 N-Channel         Toshiba
2SK2920
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RFQ
7,335
In-stock
Toshiba Semiconductor MOSFET MOLD PLN,ACTIVE,DISCON(05-04)/PHASE-OUT(...     PW-Mold-3       1 Channel 6.5 mm 5.5 mm 2.3 mm   Single Si N-Channel               1 N-Channel     MOSFETs    
SSM3K35FS(T5L,F,T)
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RFQ
40,000
In-stock
Toshiba Semiconductor MOSFET 4 V SMD/SMT     + 150 C   1 Channel 1.6 mm 0.8 mm 0.7 mm 100 mW Single Si N-Channel 20 V 180 mA 3 Ohms 400 mV Enhancement     1 N-Channel 300 ns 115 ns      
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