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Maximum Operating Temperature :
Vds-drain source breakdown voltage :
Id-continuous drain current :
Rds On-drain source on-resistance :
Pd-power dissipation :
Typical shutdown delay time :
Typical on-delay time :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Package / Case Minimum Operating Temperature Maximum Operating Temperature Series Number of Channels Length Width Height Configuration Technology Transistor Polarity Channel Mode Rise Time Fall Time Transistor Type Package Installation style Factory packaging quantity unit weight Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time Widt
2SK2381
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RFQ
7,800
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN, DISCON(08-10)/PHASE-OUT(11-01)/OB... 20 V TO-220FP-3 - 55 C + 150 C   1 Channel 10 mm 4.5 mm 15 mm Single Si N-Channel Enhancement 15 ns 15 ns   Reel Through Hole     200 V 5 A 800 mOhms 25 W 67 ns 41 ns  
ISL9N310AS3
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RFQ
24,907
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onsemi MOSFET N-Ch LL UltraFET PWM Optimized 20 V   - 55 C + 175 C ISL9N310 1 Channel 10.29 mm   7.88 mm Single Si N-Channel Enhancement 52 ns 36 ns 1 N-Channel Tube Through Hole 50 2.387 g 30 V 62 A 15 mOhms 70 W 39 ns 11 ns 4.83 mm
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