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Vds-drain source breakdown voltage :
Id-continuous drain current :
Rds On-drain source on-resistance :
Typical shutdown delay time :
Typical on-delay time :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Package / Case Minimum Operating Temperature Maximum Operating Temperature Number of Channels Length Width Height Configuration Technology Transistor Polarity Id - Continuous Drain Current Channel Mode Rise Time Fall Time Subcategory Installation style Factory Pack Quantity Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time
2SK2698
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RFQ
7,128
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Toshiba Semiconductor MOSFET N-Ch 500V 15A Rdson 0.4 Ohm   TO-3PN-3     1 Channel 15.5 mm 4.5 mm 20 mm Single Si N-Channel 15 A       MOSFETs   50            
2SK2699
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RFQ
13,555
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Toshiba Semiconductor MOSFET 30 V   - 55 C + 150 C 1 Channel 15.5 mm 4.5 mm 20 mm Single Si N-Channel   Enhancement 45 ns 65 ns   Through Hole   600 V 12 A 650 mOhms 150 W 150 ns 35 ns
2SK2915
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RFQ
14,555
In-stock
Toshiba Semiconductor MOSFET 30 V   - 55 C + 150 C 1 Channel 15.5 mm 4.5 mm 20 mm Single Si N-Channel   Enhancement 50 ns 60 ns   Through Hole   600 V 16 A 400 mOhms 150 W 155 ns 35 ns
2SK2837
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RFQ
7,500
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Toshiba Semiconductor 30 V   - 55 C + 150 C 1 Channel 15.5 mm 4.5 mm 20 mm Single Si N-Channel   Enhancement 30 ns 50 ns   Through Hole   500 V 20 A 270 mOhms 150 W 71 ns 23 ns
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