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Vf - Forward Voltage :
Vgs - Gate-Source Voltage :
Maximum Operating Temperature :
Number of Channels :
Tolerance :
Technology :
Id - Continuous Drain Current :
Typical Turn-Off Delay Time :
Typical Turn-On Delay Time :
Installation style :
Factory packaging quantity :
Vds-drain source breakdown voltage :
Id-continuous drain current :
range of working temperature :
19 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Vf - Forward Voltage Vgs - Gate-Source Voltage Package / Case Minimum Operating Temperature Maximum Operating Temperature Series Operating Supply Voltage Memory Size Number of Channels Supply Voltage - Max Supply Voltage - Min Tolerance If - Forward Current Length Width Height Pd - Power Dissipation Configuration Ir - Reverse Current Capacitance Ifsm - Forward Surge Current Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Interface Type Input Type Organization Access Time Output Type Output Current per Channel Ib - Input Bias Current Vcm - Common Mode Voltage CMRR - Common Mode Rejection Ratio Voltage Gain dB Amplifier Type en - Input Voltage Noise Density Isolation Voltage Maximum Collector Emitter Voltage Maximum Collector Current Maximum Collector Emitter Saturation Voltage Current Transfer Ratio Rise Time Fall Time Impedance Test Frequency Transistor Type Voltage Rating DC Product Type Maximum DC Current Maximum DC Resistance Dielectric Package Types of Typical Turn-Off Delay Time Typical Turn-On Delay Time Subcategory Product Category Power supply voltage - maximum Power supply voltage - minimum Installation style Factory packaging quantity unit weight GBP-gain bandwidth product SR - Conversion rate Vos - Input Bias Voltage Working power supply current Power type Dual supply voltage Maximum dual supply voltage Minimum dual supply voltage Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time Widt Capacitor-nF Capacitance -pF range of working temperature Vrrm - Repeated reverse voltage
FDS6986S
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11,150
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ON Semiconductor MOSFET 30V Dual SyncFET     16 V, 20 V SO-8 - 55 C + 150 C       2 Channel         4.9 mm 3.9 mm 1.75 mm 2 W Dual       Si N-Channel 30 V 6.5 A 29 mOhms Enhancement                                   4.5 ns, 5 ns 2.5 ns, 11 ns     2 N-Channel               20 ns, 25 ns 7 ns, 8 ns                                                    
CY7C263-55WMB
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RFQ
4,500
In-stock
Cypress Semiconductor EPROM       Windowed CDIP - 55 C + 125 C   5 V 64 kbit   5.5 V 4.5 V     32.51 mm 7.87 mm 3.56 mm                       Parallel   8 k x 8 55 ns                                                       Memory & Data Storage                                                  
2SK2842
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RFQ
6,551
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...     30 V SC-62-3 - 55 C + 150 C       1 Channel         4.6 mm 2.5 mm 1.6 mm 40 W Single       Si N-Channel 500 V 12 A 520 mOhms Enhancement                                   22 ns 36 ns     1 N-Channel                                                                      
TLP180
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RFQ
24,500
In-stock
Toshiba Semiconductor Transistor Output Optocouplers AC input 80V 3750Vrms   1.3 V   SOP-4 - 55 C + 100 C TLP180     1 Channel       50 mA 3.6 mm 4.4 mm 2.5 mm 200 mW 1 Channel                           NPN Phototransistor               3750 Vrms 80 V 50 mA 0.2 V 600 %             Transistor Output Optocouplers                 Transistor Output Optocouplers                                                
2SK2381
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RFQ
7,800
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN, DISCON(08-10)/PHASE-OUT(11-01)/OB...     20 V TO-220FP-3 - 55 C + 150 C       1 Channel         10 mm 4.5 mm 15 mm   Single       Si N-Channel       Enhancement                                   15 ns 15 ns                 Reel               Through Hole                     200 V 5 A 800 mOhms 25 W 67 ns 41 ns          
2SK2699
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RFQ
13,555
In-stock
Toshiba Semiconductor MOSFET     30 V   - 55 C + 150 C       1 Channel         15.5 mm 4.5 mm 20 mm   Single       Si N-Channel       Enhancement                                   45 ns 65 ns                                 Through Hole                     600 V 12 A 650 mOhms 150 W 150 ns 35 ns          
2SK2750
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RFQ
23,356
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...     30 V   - 55 C + 150 C       1 Channel         10.16 mm 4.45 mm 15.1 mm   Single       Si N-Channel       Enhancement                                   15 ns 15 ns     1 N-Channel           Reel               Through Hole                     600 V 3.5 A 2.2 Ohms 35 W 8 ns 2 ns          
2SK2915
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RFQ
14,555
In-stock
Toshiba Semiconductor MOSFET     30 V   - 55 C + 150 C       1 Channel         15.5 mm 4.5 mm 20 mm   Single       Si N-Channel       Enhancement                                   50 ns 60 ns                                 Through Hole                     600 V 16 A 400 mOhms 150 W 155 ns 35 ns          
2SK2998
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RFQ
8,755
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Toshiba Semiconductor MOSFET MOSFET Small Signal   30 V TO-92-3 - 55 C + 150 C       1 Channel         5.1 mm 4.1 mm 8.2 mm 900 mW Single       Si N-Channel 500 V 500 mA 18 Ohms Enhancement                                     11 ns                                                                            
2SK3131
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RFQ
23,511
In-stock
Toshiba Semiconductor MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-...     30 V TO-3PL-3 - 55 C + 150 C       1 Channel         20 mm 5 mm 26 mm 250 W Single       Si N-Channel 500 V 50 A 110 mOhms Enhancement                                   105 ns 65 ns                     51 ns 20 ns   MOSFET                                                
ISL9N310AS3
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RFQ
24,907
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ON Semiconductor MOSFET N-Ch LL UltraFET PWM Optimized     20 V   - 55 C + 175 C ISL9N310     1 Channel         10.29 mm   7.88 mm   Single       Si N-Channel       Enhancement                                   52 ns 36 ns     1 N-Channel           Tube               Through Hole 50 2.387 g                 30 V 62 A 15 mOhms 70 W 39 ns 11 ns 4.83 mm        
12CWQ10FNTRPBF
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RFQ
15,600
In-stock
Vishay Semiconductors Schottky Diodes & Rectifiers 12 Amp 100 Volt Common Cathode Schottky Rectifiers 0.95 V     - 55 C + 150 C               12 A 6.73 mm 6.22 mm 2.39 mm   Dual Common Cathode 1000 uA   330 A Si                                                         Schottky Diodes & Rectifiers         Schottky Diode       Schottky diodes and rectifiers     SMD/SMT 2000 300 mg                                   - 55 C to + 150 C 100 V
TPCS8204
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RFQ
45,000
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Toshiba Semiconductor MOSFET     12 V TSSOP-Advance-8 - 55 C + 150 C       2 Channel         3.65 mm 3.5 mm 0.75 mm 1.1 W Dual       Si N-Channel 20 V 6 A 17 mOhms Enhancement                                   5 ns 10 ns                                                                            
2SK2837
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RFQ
7,500
In-stock
Toshiba Semiconductor     30 V   - 55 C + 150 C       1 Channel         15.5 mm 4.5 mm 20 mm   Single       Si N-Channel       Enhancement                                   30 ns 50 ns                                 Through Hole                     500 V 20 A 270 mOhms 150 W 71 ns 23 ns          
BLM03BB470SN1J
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RFQ
450,800
In-stock
Murata Electronics Ferrite bead       0201 (0603 metric) - 55 C + 125 C             25 %   0.6 mm 0.3 mm 0.3 mm                                                             47 Ohms 100 MHz       200 mA 700 mOhms             Ferrite bead         0.170 mg                                   - 55 C to + 125 C  
ECHU1C103JX5
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RFQ
45,060
In-stock
Panasonics Film Capacitor 0.01uF 16VDC 5% PPS FILM 0805 Stacked Film Capacitors     0805 (2012 metric) - 55 C + 125 C             5 %   2 mm 1.25 mm 1.1 mm       0.01 uF                                                           16 VDC Film Capacitors     Polyphenylene Sulfide (PPS) Cut Tape Stacked Metallized Film Chip Capacitor       Film capacitor       3000 5.500 mg                               10 nF 10000 pF    
FDQ7238S
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RFQ
22,500
In-stock
ON Semiconductor MOSFET N-Channel PowerTrench     16 V   - 55 C + 150 C       2 Channel         8.6 mm 3.9 mm 1.45 mm   Dual       Si N-Channel       Enhancement                                     13 ns                 Reel               SMD/SMT 2500 338 mg                 30 V 14 A 7 mOhms 2.4 W 28 ns, 51 ns 11 ns, 14 ns          
5962-8771001PA
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RFQ
350
In-stock
Texas instruments Operational Amplifiers - Op Amps DUAL OP AMP         - 55 C + 125 C       2 Channel         9.6 mm 6.67 mm 4.57 mm           Bipolar             Rail-to-Rail       30 mA 150 nA Negative Rail to Positive Rail - 1.5 V 70 dB to 80 dB 100 dB High Gain Amplifier 40 nV/sqrt Hz                               Tube           32 V 3 V Through Hole 1   700 kHz 0.3 V/us 5 mV 350 uA Single, Dual +/- 3 V, +/- 5 V, +/- 9 V +/- 16 V +/- 1.5 V                      
SSL4101T
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RFQ
45,000
In-stock
NXP Semiconductors Power Factor Correction - PFC Medium Power SSL Driver         - 55 C + 150 C                                                                                                   MouseReel       PMIC - Power Management ICs Power Factor Correction - PFC     SMD/SMT 2500 666 mg                                      
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