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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Vf - Forward Voltage Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Series Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Output Type Isolation Voltage Maximum Collector Emitter Voltage Maximum Collector Current Maximum Collector Emitter Saturation Voltage Current Transfer Ratio Rise Time Fall Time Transistor Type Product Type Typical Turn-Off Delay Time Typical Turn-On Delay Time Product Category Factory Pack Quantity
2SK2842
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RFQ
6,551
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...     30 V SMD/SMT SC-62-3 - 55 C + 150 C   Reel 1 Channel 4.6 mm 2.5 mm 1.6 mm 40 W Single Si N-Channel 500 V 12 A 520 mOhms Enhancement             22 ns 36 ns 1 N-Channel         50
TLP180
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RFQ
24,500
In-stock
Toshiba Semiconductor Transistor Output Optocouplers AC input 80V 3750Vrms   1.3 V   SMD/SMT SOP-4 - 55 C + 100 C TLP180   1 Channel 3.6 mm 4.4 mm 2.5 mm 200 mW 1 Channel             NPN Phototransistor 3750 Vrms 80 V 50 mA 0.2 V 600 %       Transistor Output Optocouplers     Transistor Output Optocouplers  
2SK2998
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RFQ
8,755
In-stock
Toshiba Semiconductor MOSFET MOSFET Small Signal   30 V Through Hole TO-92-3 - 55 C + 150 C     1 Channel 5.1 mm 4.1 mm 8.2 mm 900 mW Single Si N-Channel 500 V 500 mA 18 Ohms Enhancement               11 ns            
2SK3131
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RFQ
23,511
In-stock
Toshiba Semiconductor MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-...     30 V Through Hole TO-3PL-3 - 55 C + 150 C   Reel 1 Channel 20 mm 5 mm 26 mm 250 W Single Si N-Channel 500 V 50 A 110 mOhms Enhancement             105 ns 65 ns     51 ns 20 ns MOSFET  
TPCS8204
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RFQ
45,000
In-stock
Toshiba Semiconductor MOSFET     12 V SMD/SMT TSSOP-Advance-8 - 55 C + 150 C     2 Channel 3.65 mm 3.5 mm 0.75 mm 1.1 W Dual Si N-Channel 20 V 6 A 17 mOhms Enhancement             5 ns 10 ns            
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