semiconductors-Integrated Circuits - ICs - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Minimum Operating Temperature	Maximum Operating Temperature	Series	Number of Channels	Length	Width	Height	Configuration	Technology	Transistor Polarity	Channel Mode	Input Type	Output Current per Channel	Ib - Input Bias Current	Vcm - Common Mode Voltage	CMRR - Common Mode Rejection Ratio	Voltage Gain dB	Amplifier Type	en - Input Voltage Noise Density	Rise Time	Fall Time	Transistor Type	Package	Power supply voltage - maximum	Power supply voltage - minimum	Installation style	Factory packaging quantity	unit weight	GBP-gain bandwidth product	SR - Conversion rate	Vos - Input Bias Voltage	Working power supply current	Power type	Dual supply voltage	Maximum dual supply voltage	Minimum dual supply voltage	Vds-drain source breakdown voltage	Id-continuous drain current	Rds On-drain source on-resistance	Pd-power dissipation	Typical shutdown delay time	Typical on-delay time	Widt
	ISL9N310AS3		GET PRICE	PDF RFQ	24,907 In-stock	onsemi	MOSFET N-Ch LL UltraFET PWM Optimized	20 V	- 55 C	+ 175 C	ISL9N310	1 Channel	10.29 mm		7.88 mm	Single	Si	N-Channel	Enhancement									52 ns	36 ns	1 N-Channel	Tube			Through Hole	50	2.387 g									30 V	62 A	15 mOhms	70 W	39 ns	11 ns	4.83 mm
	5962-8771001PA		GET PRICE	PDF RFQ	350 In-stock	Texas instruments	Operational Amplifiers - Op Amps DUAL OP AMP		- 55 C	+ 125 C		2 Channel	9.6 mm	6.67 mm	4.57 mm		Bipolar			Rail-to-Rail	30 mA	150 nA	Negative Rail to Positive Rail - 1.5 V	70 dB to 80 dB	100 dB	High Gain Amplifier	40 nV/sqrt Hz				Tube	32 V	3 V	Through Hole	1		700 kHz	0.3 V/us	5 mV	350 uA	Single, Dual	+/- 3 V, +/- 5 V, +/- 9 V	+/- 16 V	+/- 1.5 V

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