semiconductors-Integrated Circuits - ICs - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Product	Vf - Forward Voltage	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Series	Packaging	Number of Channels	Length	Width	Height	Pd - Power Dissipation	Configuration	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Channel Mode	Output Type	Isolation Voltage	Maximum Collector Emitter Voltage	Maximum Collector Current	Maximum Collector Emitter Saturation Voltage	Current Transfer Ratio	Rise Time	Fall Time	Transistor Type	Product Type	Package	Typical Turn-Off Delay Time	Typical Turn-On Delay Time	Product Category	Installation style	Factory packaging quantity	unit weight	Vds-drain source breakdown voltage	Id-continuous drain current	Rds On-drain source on-resistance	Pd-power dissipation	Typical shutdown delay time	Typical on-delay time	Widt
	2SK2842		GET PRICE	PDF RFQ	6,551 In-stock	Toshiba Semiconductor	MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...			30 V	SMD/SMT	SC-62-3	- 55 C	+ 150 C		Reel	1 Channel	4.6 mm	2.5 mm	1.6 mm	40 W	Single	Si	N-Channel	500 V	12 A	520 mOhms	Enhancement							22 ns	36 ns	1 N-Channel
	TLP180		GET PRICE	PDF RFQ	24,500 In-stock	Toshiba Semiconductor	Transistor Output Optocouplers AC input 80V 3750Vrms		1.3 V		SMD/SMT	SOP-4	- 55 C	+ 100 C	TLP180		1 Channel	3.6 mm	4.4 mm	2.5 mm	200 mW	1 Channel							NPN Phototransistor	3750 Vrms	80 V	50 mA	0.2 V	600 %				Transistor Output Optocouplers				Transistor Output Optocouplers
	2SK2998		GET PRICE	PDF RFQ	8,755 In-stock	Toshiba Semiconductor	MOSFET	MOSFET Small Signal		30 V	Through Hole	TO-92-3	- 55 C	+ 150 C			1 Channel	5.1 mm	4.1 mm	8.2 mm	900 mW	Single	Si	N-Channel	500 V	500 mA	18 Ohms	Enhancement								11 ns
	2SK3131		GET PRICE	PDF RFQ	23,511 In-stock	Toshiba Semiconductor	MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-...			30 V	Through Hole	TO-3PL-3	- 55 C	+ 150 C		Reel	1 Channel	20 mm	5 mm	26 mm	250 W	Single	Si	N-Channel	500 V	50 A	110 mOhms	Enhancement							105 ns	65 ns				51 ns	20 ns	MOSFET
	ISL9N310AS3		GET PRICE	PDF RFQ	24,907 In-stock	onsemi	MOSFET N-Ch LL UltraFET PWM Optimized			20 V			- 55 C	+ 175 C	ISL9N310		1 Channel	10.29 mm		7.88 mm		Single	Si	N-Channel				Enhancement							52 ns	36 ns	1 N-Channel		Tube				Through Hole	50	2.387 g	30 V	62 A	15 mOhms	70 W	39 ns	11 ns	4.83 mm

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