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Vgs - Gate-Source Voltage :
Maximum Operating Temperature :
Pd - Power Dissipation :
Technology :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Installation style :
Factory packaging quantity :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Input Type Output Current per Channel Ib - Input Bias Current Vcm - Common Mode Voltage CMRR - Common Mode Rejection Ratio Voltage Gain dB Amplifier Type en - Input Voltage Noise Density Rise Time Fall Time Transistor Type Package Typical Turn-Off Delay Time Typical Turn-On Delay Time Power supply voltage - maximum Power supply voltage - minimum Installation style Factory packaging quantity unit weight GBP-gain bandwidth product SR - Conversion rate Vos - Input Bias Voltage Working power supply current Power type Dual supply voltage Maximum dual supply voltage Minimum dual supply voltage Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time
FDS6986S
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11,150
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onsemi MOSFET 30V Dual SyncFET 16 V, 20 V SO-8 - 55 C + 150 C Cut Tape 2 Channel 4.9 mm 3.9 mm 1.75 mm 2 W Dual Si N-Channel 30 V 6.5 A 29 mOhms Enhancement                 4.5 ns, 5 ns 2.5 ns, 11 ns 2 N-Channel   20 ns, 25 ns 7 ns, 8 ns                                      
TPCS8204
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45,000
In-stock
Toshiba Semiconductor MOSFET 12 V TSSOP-Advance-8 - 55 C + 150 C   2 Channel 3.65 mm 3.5 mm 0.75 mm 1.1 W Dual Si N-Channel 20 V 6 A 17 mOhms Enhancement                 5 ns 10 ns                                              
FDQ7238S
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RFQ
22,500
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onsemi MOSFET N-Channel PowerTrench 16 V   - 55 C + 150 C   2 Channel 8.6 mm 3.9 mm 1.45 mm   Dual Si N-Channel       Enhancement                   13 ns   Reel         SMD/SMT 2500 338 mg                 30 V 14 A 7 mOhms 2.4 W 28 ns, 51 ns 11 ns, 14 ns
5962-8771001PA
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RFQ
350
In-stock
Texas instruments Operational Amplifiers - Op Amps DUAL OP AMP     - 55 C + 125 C   2 Channel 9.6 mm 6.67 mm 4.57 mm     Bipolar           Rail-to-Rail 30 mA 150 nA Negative Rail to Positive Rail - 1.5 V 70 dB to 80 dB 100 dB High Gain Amplifier 40 nV/sqrt Hz       Tube     32 V 3 V Through Hole 1   700 kHz 0.3 V/us 5 mV 350 uA Single, Dual +/- 3 V, +/- 5 V, +/- 9 V +/- 16 V +/- 1.5 V            
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