Build a global manufacturer and supplier trusted trading platform.
Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Maximum Operating Temperature :
Emitter- Base Voltage VEBO :
Gain Bandwidth Product fT :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
DC Collector/Base Gain hfe Min :
Typical Turn-Off Delay Time :
Typical Turn-On Delay Time :
Product Category :
Factory packaging quantity :
Factory Pack Quantity :
Id-continuous drain current :
Rds On-drain source on-resistance :
Pd-power dissipation :
18 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Vf - Forward Voltage Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Series Packaging Qualification Number of Channels If - Forward Current Length Width Height Pd - Power Dissipation Configuration Ir - Reverse Current Vrrm - Repetitive Reverse Voltage Ifsm - Forward Surge Current Technology Transistor Polarity Collector- Emitter Voltage VCEO Max Collector- Base Voltage VCBO Emitter- Base Voltage VEBO Collector-Emitter Saturation Voltage Maximum DC Collector Current Gain Bandwidth Product fT Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Channel Mode DC Collector/Base Gain hfe Min Continuous Collector Current Rise Time Fall Time Transistor Type Product Type Package Typical Turn-Off Delay Time Typical Turn-On Delay Time Subcategory Product Category Factory packaging quantity unit weight Factory Pack Quantity RoHS Id - Continuous Drain Curren trademark Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time Widt Gate/source cutoff voltage Maximum drain/gate voltage DC Current Gain hFE Max
PDS3100Q-13
GET PRICE
RFQ
45,200
In-stock
Diodes Incorporated Schottky Diodes & Rectifiers Schottky Rectifier   780 mV             Tape & Reel (TR) AEC-Q101   3 A         Single 2 uA 100 V 90 A                                       PowerDI5-3             5000 Green available                        
2SK2842
GET PRICE
RFQ
6,551
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...     30 V SMD/SMT SC-62-3 - 55 C + 150 C   Reel   1 Channel   4.6 mm 2.5 mm 1.6 mm 40 W Single       Si N-Channel             500 V 12 A 520 mOhms   Enhancement     22 ns 36 ns 1 N-Channel                 50                          
2SK2698
GET PRICE
RFQ
7,128
In-stock
Toshiba Semiconductor MOSFET N-Ch 500V 15A Rdson 0.4 Ohm       Through Hole TO-3PN-3           1 Channel   15.5 mm 4.5 mm 20 mm   Single       Si N-Channel             500 V 15 A 400 mOhms                       MOSFETs       50                          
2SC3709A
GET PRICE
RFQ
8,533
In-stock
Toshiba Semiconductor Bipolar Transistors - BJT             + 150 C                 30 W Single         NPN 50 V 60 V 6 V   12 A 90 MHz           120                 Transistors                                  
2SJ106Y
GET PRICE
RFQ
17,500
In-stock
Toshiba Semiconductor MOSFET                     1 Channel   2.9 mm 1.5 mm 1.1 mm   Single       Si P-Channel                               1 P-Channel                                            
2SK209Y
GET PRICE
RFQ
22,553
In-stock
Toshiba Semiconductor RF-Mosfet-N-Channel-JFET-10V-500μA-1kHz-SC-59         SOT-346-3                       Single         N-Channel                                   Cut Tape         3000             14 mA   150 mW       -1.5V -50V  
2SK941
GET PRICE
RFQ
23,351
In-stock
Toshiba Semiconductor MOSFET                     1 Channel           Single       Si N-Channel                               1 N-Channel                       Toshiba                    
2SK982
GET PRICE
RFQ
17,735
In-stock
Toshiba Semiconductor MOSFET                     1 Channel           Single       Si N-Channel                                                                            
2SK2232
GET PRICE
RFQ
7,855
In-stock
Toshiba Semiconductor MOSFET N-Ch 60V 25A Rdson 0.046 Ohm                     1 Channel   10 mm 4.5 mm 15 mm   Single       Si N-Channel                                             50           60 V 25 A 46 mOhms              
2SK2401
GET PRICE
RFQ
4,199
In-stock
Toshiba Semiconductor MOSFET 220SM PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(1...                     1 Channel           Single       Si N-Channel                                 MOSFET                                          
2SK2920
GET PRICE
RFQ
7,335
In-stock
Toshiba Semiconductor MOSFET MOLD PLN,ACTIVE,DISCON(05-04)/PHASE-OUT(...         PW-Mold-3           1 Channel   6.5 mm 5.5 mm 2.3 mm   Single       Si N-Channel                               1 N-Channel         MOSFETs                                  
2SK2998
GET PRICE
RFQ
8,755
In-stock
Toshiba Semiconductor MOSFET MOSFET Small Signal   30 V Through Hole TO-92-3 - 55 C + 150 C       1 Channel   5.1 mm 4.1 mm 8.2 mm 900 mW Single       Si N-Channel             500 V 500 mA 18 Ohms   Enhancement       11 ns                                              
2SK3131
GET PRICE
RFQ
23,511
In-stock
Toshiba Semiconductor MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-...     30 V Through Hole TO-3PL-3 - 55 C + 150 C   Reel   1 Channel   20 mm 5 mm 26 mm 250 W Single       Si N-Channel             500 V 50 A 110 mOhms   Enhancement     105 ns 65 ns       51 ns 20 ns   MOSFET                                
ISL9N310AS3
GET PRICE
RFQ
24,907
In-stock
onsemi MOSFET N-Ch LL UltraFET PWM Optimized     20 V     - 55 C + 175 C ISL9N310     1 Channel   10.29 mm   7.88 mm   Single       Si N-Channel                     Enhancement     52 ns 36 ns 1 N-Channel   Tube         50 2.387 g         30 V 62 A 15 mOhms 70 W 39 ns 11 ns 4.83 mm      
2SK170-BL
GET PRICE
RFQ
50,000
In-stock
Toshiba Semiconductor JFET TO-92 FET(LF),DISCON(07-10)/PHASE-OUT(10-01)/OBS...                                 Single         N-Channel                                           JFET 200 453.600 mg           12 mA                
HUF76143S3
GET PRICE
RFQ
50,000
In-stock
onsemi MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch     16 V Through Hole   - 40 C + 150 C   Tube   1 Channel   6.8 mm 2.5 mm 6.3 mm 225 W Single       Si N-Channel             30 V   5.5 mOhms   Enhancement     145 ns, 55 ns 18 ns 1 N-Channel     30 ns, 40 ns 22 ns, 14 ns       0.084199 oz 50 N 75 A                      
SSM3K35FS(T5L,F,T)
GET PRICE
RFQ
40,000
In-stock
Toshiba Semiconductor MOSFET     4 V SMD/SMT     + 150 C       1 Channel   1.6 mm 0.8 mm 0.7 mm 100 mW Single       Si N-Channel             20 V 180 mA 3 Ohms 400 mV Enhancement         1 N-Channel     300 ns 115 ns                                    
A1941
GET PRICE
RFQ
8,623
In-stock
Toshiba       Through Hole     + 150 C                 100 W Single       Si PNP - 140 V - 140 V - 5 V 2 V   30 MHz           35 10 A       BJTs - Bipolar Transistors           4000                             83
Page 1 / 1