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Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Maximum Operating Temperature :
Number of Channels :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Factory packaging quantity :
Id-continuous drain current :
Rds On-drain source on-resistance :
Pd-power dissipation :
Typical shutdown delay time :
Typical on-delay time :
22 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Vf - Forward Voltage Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Series Packaging Number of Channels If - Forward Current Length Width Height Pd - Power Dissipation Configuration Ir - Reverse Current Ifsm - Forward Surge Current Technology Transistor Polarity Collector- Base Voltage VCBO Emitter- Base Voltage VEBO Collector-Emitter Saturation Voltage Gain Bandwidth Product fT Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Channel Mode Tradename DC Collector/Base Gain hfe Min Continuous Collector Current Rise Time Fall Time Transistor Type Product Type Package Types of Typical Turn-Off Delay Time Typical Turn-On Delay Time Subcategory Product Category Factory packaging quantity unit weight Factory Pack Quantity RoHS Id - Continuous Drain Curren trademark Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time Widt range of working temperature Vrrm - Repeated reverse voltage Humidity sensitivity DC Current Gain hFE Max
FDS6986S
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11,150
In-stock
onsemi MOSFET 30V Dual SyncFET     16 V, 20 V SMD/SMT SO-8 - 55 C + 150 C   Cut Tape 2 Channel   4.9 mm 3.9 mm 1.75 mm 2 W Dual     Si N-Channel         30 V 6.5 A 29 mOhms   Enhancement       4.5 ns, 5 ns 2.5 ns, 11 ns 2 N-Channel       20 ns, 25 ns 7 ns, 8 ns         2500                            
2SK2842
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RFQ
6,551
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Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...     30 V SMD/SMT SC-62-3 - 55 C + 150 C   Reel 1 Channel   4.6 mm 2.5 mm 1.6 mm 40 W Single     Si N-Channel         500 V 12 A 520 mOhms   Enhancement       22 ns 36 ns 1 N-Channel                   50                            
2SK2698
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RFQ
7,128
In-stock
Toshiba Semiconductor MOSFET N-Ch 500V 15A Rdson 0.4 Ohm       Through Hole TO-3PN-3         1 Channel   15.5 mm 4.5 mm 20 mm   Single     Si N-Channel         500 V 15 A 400 mOhms                           MOSFETs       50                            
2SJ106Y
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RFQ
17,500
In-stock
Toshiba Semiconductor MOSFET                   1 Channel   2.9 mm 1.5 mm 1.1 mm   Single     Si P-Channel                             1 P-Channel                                                
2SJ162
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RFQ
8,555
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Renesas Electronics MOSFET Power MOSFET                                     Si                                   Tube                                         Yes  
2SK941
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RFQ
23,351
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Toshiba Semiconductor MOSFET                   1 Channel           Single     Si N-Channel                             1 N-Channel                         Toshiba                      
2SK982
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RFQ
17,735
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Toshiba Semiconductor MOSFET                   1 Channel           Single     Si N-Channel                                                                              
2SK2232
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RFQ
7,855
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Toshiba Semiconductor MOSFET N-Ch 60V 25A Rdson 0.046 Ohm                   1 Channel   10 mm 4.5 mm 15 mm   Single     Si N-Channel                                             50           60 V 25 A 46 mOhms                
2SK2401
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RFQ
4,199
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Toshiba Semiconductor MOSFET 220SM PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(1...                   1 Channel           Single     Si N-Channel                               MOSFET                                              
2SK2920
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RFQ
7,335
In-stock
Toshiba Semiconductor MOSFET MOLD PLN,ACTIVE,DISCON(05-04)/PHASE-OUT(...         PW-Mold-3         1 Channel   6.5 mm 5.5 mm 2.3 mm   Single     Si N-Channel                             1 N-Channel           MOSFETs                                    
2SK2998
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RFQ
8,755
In-stock
Toshiba Semiconductor MOSFET MOSFET Small Signal   30 V Through Hole TO-92-3 - 55 C + 150 C     1 Channel   5.1 mm 4.1 mm 8.2 mm 900 mW Single     Si N-Channel         500 V 500 mA 18 Ohms   Enhancement         11 ns                                                  
2SK3131
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RFQ
23,511
In-stock
Toshiba Semiconductor MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-...     30 V Through Hole TO-3PL-3 - 55 C + 150 C   Reel 1 Channel   20 mm 5 mm 26 mm 250 W Single     Si N-Channel         500 V 50 A 110 mOhms   Enhancement       105 ns 65 ns         51 ns 20 ns   MOSFET                                  
ISL9N310AS3
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RFQ
24,907
In-stock
onsemi MOSFET N-Ch LL UltraFET PWM Optimized     20 V     - 55 C + 175 C ISL9N310   1 Channel   10.29 mm   7.88 mm   Single     Si N-Channel                 Enhancement       52 ns 36 ns 1 N-Channel   Tube           50 2.387 g         30 V 62 A 15 mOhms 70 W 39 ns 11 ns 4.83 mm        
12CWQ10FNTRPBF
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RFQ
15,600
In-stock
Vishay Semiconductors Schottky Diodes & Rectifiers 12 Amp 100 Volt Common Cathode Schottky Rectifiers 0.95 V       - 55 C + 150 C       12 A 6.73 mm 6.22 mm 2.39 mm   Dual Common Cathode 1000 uA 330 A Si                                 Schottky Diodes & Rectifiers   Schottky Diode       Schottky diodes and rectifiers 2000 300 mg                       - 55 C to + 150 C 100 V    
TPCS8204
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RFQ
45,000
In-stock
Toshiba Semiconductor MOSFET     12 V SMD/SMT TSSOP-Advance-8 - 55 C + 150 C     2 Channel   3.65 mm 3.5 mm 0.75 mm 1.1 W Dual     Si N-Channel         20 V 6 A 17 mOhms   Enhancement       5 ns 10 ns                                                  
FDQ7238S
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RFQ
22,500
In-stock
onsemi MOSFET N-Channel PowerTrench     16 V     - 55 C + 150 C     2 Channel   8.6 mm 3.9 mm 1.45 mm   Dual     Si N-Channel                 Enhancement         13 ns     Reel           2500 338 mg         30 V 14 A 7 mOhms 2.4 W 28 ns, 51 ns 11 ns, 14 ns          
HUF76143S3
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RFQ
50,000
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onsemi MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch     16 V Through Hole   - 40 C + 150 C   Tube 1 Channel   6.8 mm 2.5 mm 6.3 mm 225 W Single     Si N-Channel         30 V   5.5 mOhms   Enhancement       145 ns, 55 ns 18 ns 1 N-Channel       30 ns, 40 ns 22 ns, 14 ns       0.084199 oz 50 N 75 A                        
SUP90N08-4M8P-E3
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RFQ
35,000
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Vishay MOSFET RECOMMENDED ALT 781-SUP85N10-10-E3               SUP Tube                   Si                     TrenchFET                       MOSFET   0.211644 oz 50                            
SSM6J412TU
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RFQ
60,500
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Toshiba Semiconductor MOSFET       SMD/SMT UF6-6             2 mm 1.7 mm 0.7 mm         Si                                           MOSFETs                                    
SSM3K35FS(T5L,F,T)
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RFQ
40,000
In-stock
Toshiba Semiconductor MOSFET     4 V SMD/SMT     + 150 C     1 Channel   1.6 mm 0.8 mm 0.7 mm 100 mW Single     Si N-Channel         20 V 180 mA 3 Ohms 400 mV Enhancement           1 N-Channel       300 ns 115 ns                                      
SSM6N15FU
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RFQ
85,000
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Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type       SMD/SMT           2 Channel   2 mm 1.25 mm 0.9 mm   Dual     Si N-Channel                             2 N-Channel           MOSFETs MOSFET                                  
A1941
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RFQ
8,623
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Toshiba       Through Hole     + 150 C               100 W Single     Si PNP - 140 V - 5 V 2 V 30 MHz             35 10 A       BJTs - Bipolar Transistors             4000                               83
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