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13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Length | Width | Height | Pd - Power Dissipation | Configuration | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | Rise Time | Fall Time | Transistor Type | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Subcategory | Product Category | Factory packaging quantity | trademark | Vds-drain source breakdown voltage | Id-continuous drain current | Rds On-drain source on-resistance | |
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6,551
In-stock
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Toshiba Semiconductor | MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... | 30 V | SMD/SMT | SC-62-3 | - 55 C | + 150 C | Reel | 1 Channel | 4.6 mm | 2.5 mm | 1.6 mm | 40 W | Single | Si | N-Channel | 500 V | 12 A | 520 mOhms | Enhancement | 22 ns | 36 ns | 1 N-Channel | ||||||||||||||
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7,128
In-stock
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Toshiba Semiconductor | MOSFET N-Ch 500V 15A Rdson 0.4 Ohm | Through Hole | TO-3PN-3 | 1 Channel | 15.5 mm | 4.5 mm | 20 mm | Single | Si | N-Channel | 500 V | 15 A | 400 mOhms | MOSFETs | ||||||||||||||||||||||
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17,500
In-stock
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Toshiba Semiconductor | MOSFET | 1 Channel | 2.9 mm | 1.5 mm | 1.1 mm | Single | Si | P-Channel | 1 P-Channel | |||||||||||||||||||||||||||
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23,351
In-stock
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Toshiba Semiconductor | MOSFET | 1 Channel | Single | Si | N-Channel | 1 N-Channel | Toshiba | |||||||||||||||||||||||||||||
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17,735
In-stock
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Toshiba Semiconductor | MOSFET | 1 Channel | Single | Si | N-Channel | |||||||||||||||||||||||||||||||
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7,855
In-stock
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Toshiba Semiconductor | MOSFET N-Ch 60V 25A Rdson 0.046 Ohm | 1 Channel | 10 mm | 4.5 mm | 15 mm | Single | Si | N-Channel | 50 | 60 V | 25 A | 46 mOhms | ||||||||||||||||||||||||
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4,199
In-stock
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Toshiba Semiconductor | MOSFET 220SM PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(1... | 1 Channel | Single | Si | N-Channel | |||||||||||||||||||||||||||||||
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7,335
In-stock
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Toshiba Semiconductor | MOSFET MOLD PLN,ACTIVE,DISCON(05-04)/PHASE-OUT(... | PW-Mold-3 | 1 Channel | 6.5 mm | 5.5 mm | 2.3 mm | Single | Si | N-Channel | 1 N-Channel | MOSFETs | |||||||||||||||||||||||||
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8,755
In-stock
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Toshiba Semiconductor | MOSFET | MOSFET Small Signal | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | 1 Channel | 5.1 mm | 4.1 mm | 8.2 mm | 900 mW | Single | Si | N-Channel | 500 V | 500 mA | 18 Ohms | Enhancement | 11 ns | ||||||||||||||||
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23,511
In-stock
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Toshiba Semiconductor | MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-... | 30 V | Through Hole | TO-3PL-3 | - 55 C | + 150 C | Reel | 1 Channel | 20 mm | 5 mm | 26 mm | 250 W | Single | Si | N-Channel | 500 V | 50 A | 110 mOhms | Enhancement | 105 ns | 65 ns | 51 ns | 20 ns | MOSFET | ||||||||||||
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45,000
In-stock
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Toshiba Semiconductor | MOSFET | 12 V | SMD/SMT | TSSOP-Advance-8 | - 55 C | + 150 C | 2 Channel | 3.65 mm | 3.5 mm | 0.75 mm | 1.1 W | Dual | Si | N-Channel | 20 V | 6 A | 17 mOhms | Enhancement | 5 ns | 10 ns | ||||||||||||||||
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60,500
In-stock
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Toshiba Semiconductor | MOSFET | SMD/SMT | UF6-6 | 2 mm | 1.7 mm | 0.7 mm | Si | MOSFETs | ||||||||||||||||||||||||||||
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40,000
In-stock
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Toshiba Semiconductor | MOSFET | 4 V | SMD/SMT | + 150 C | 1 Channel | 1.6 mm | 0.8 mm | 0.7 mm | 100 mW | Single | Si | N-Channel | 20 V | 180 mA | 3 Ohms | 400 mV | Enhancement | 1 N-Channel | 300 ns | 115 ns |