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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Maximum Operating Temperature | Number of Channels | Length | Width | Height | Pd - Power Dissipation | Configuration | Technology | Transistor Polarity | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | DC Collector/Base Gain hfe Min | Continuous Collector Current | Transistor Type | Product Type | Subcategory | Product Category | Factory packaging quantity | DC Current Gain hFE Max | |
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GET PRICE |
85,000
In-stock
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Toshiba | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type | SMD/SMT | 2 Channel | 2 mm | 1.25 mm | 0.9 mm | Dual | Si | N-Channel | 2 N-Channel | MOSFETs | MOSFET | |||||||||||||
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GET PRICE |
8,623
In-stock
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Toshiba | Through Hole | + 150 C | 100 W | Single | Si | PNP | - 140 V | - 5 V | 2 V | 30 MHz | 35 | 10 A | BJTs - Bipolar Transistors | 4000 | 83 |
