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Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Maximum Operating Temperature :
Packaging :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Typical Turn-Off Delay Time :
Typical Turn-On Delay Time :
Id-continuous drain current :
Rds On-drain source on-resistance :
13 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Series Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Channel Mode Rise Time Fall Time Transistor Type Typical Turn-Off Delay Time Typical Turn-On Delay Time Subcategory Product Category unit weight Factory Pack Quantity RoHS Id - Continuous Drain Curren trademark Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time Widt
2SK2842
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RFQ
6,551
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...   30 V SMD/SMT SC-62-3 - 55 C + 150 C   Reel 1 Channel 4.6 mm 2.5 mm 1.6 mm 40 W Single Si N-Channel 500 V 12 A 520 mOhms   Enhancement 22 ns 36 ns 1 N-Channel           50                    
2SK2698
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RFQ
7,128
In-stock
Toshiba Semiconductor MOSFET N-Ch 500V 15A Rdson 0.4 Ohm     Through Hole TO-3PN-3         1 Channel 15.5 mm 4.5 mm 20 mm   Single Si N-Channel 500 V 15 A 400 mOhms               MOSFETs     50                    
2SJ106Y
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RFQ
17,500
In-stock
Toshiba Semiconductor MOSFET                 1 Channel 2.9 mm 1.5 mm 1.1 mm   Single Si P-Channel               1 P-Channel                                
2SK941
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RFQ
23,351
In-stock
Toshiba Semiconductor MOSFET                 1 Channel         Single Si N-Channel               1 N-Channel                 Toshiba              
2SK982
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RFQ
17,735
In-stock
Toshiba Semiconductor MOSFET                 1 Channel         Single Si N-Channel                                                
2SK2232
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RFQ
7,855
In-stock
Toshiba Semiconductor MOSFET N-Ch 60V 25A Rdson 0.046 Ohm                 1 Channel 10 mm 4.5 mm 15 mm   Single Si N-Channel                                   60 V 25 A 46 mOhms        
2SK2401
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RFQ
4,199
In-stock
Toshiba Semiconductor MOSFET 220SM PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(1...                 1 Channel         Single Si N-Channel                                                
2SK2920
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RFQ
7,335
In-stock
Toshiba Semiconductor MOSFET MOLD PLN,ACTIVE,DISCON(05-04)/PHASE-OUT(...       PW-Mold-3         1 Channel 6.5 mm 5.5 mm 2.3 mm   Single Si N-Channel               1 N-Channel     MOSFETs                          
2SK2998
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RFQ
8,755
In-stock
Toshiba Semiconductor MOSFET MOSFET Small Signal 30 V Through Hole TO-92-3 - 55 C + 150 C     1 Channel 5.1 mm 4.1 mm 8.2 mm 900 mW Single Si N-Channel 500 V 500 mA 18 Ohms   Enhancement   11 ns                                  
2SK3131
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RFQ
23,511
In-stock
Toshiba Semiconductor MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-...   30 V Through Hole TO-3PL-3 - 55 C + 150 C   Reel 1 Channel 20 mm 5 mm 26 mm 250 W Single Si N-Channel 500 V 50 A 110 mOhms   Enhancement 105 ns 65 ns   51 ns 20 ns   MOSFET                        
ISL9N310AS3
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RFQ
24,907
In-stock
onsemi MOSFET N-Ch LL UltraFET PWM Optimized   20 V     - 55 C + 175 C ISL9N310   1 Channel 10.29 mm   7.88 mm   Single Si N-Channel         Enhancement 52 ns 36 ns 1 N-Channel         2.387 g         30 V 62 A 15 mOhms 70 W 39 ns 11 ns 4.83 mm
HUF76143S3
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RFQ
50,000
In-stock
onsemi MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch   16 V Through Hole   - 40 C + 150 C   Tube 1 Channel 6.8 mm 2.5 mm 6.3 mm 225 W Single Si N-Channel 30 V   5.5 mOhms   Enhancement 145 ns, 55 ns 18 ns 1 N-Channel 30 ns, 40 ns 22 ns, 14 ns     0.084199 oz 50 N 75 A                
SSM3K35FS(T5L,F,T)
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RFQ
40,000
In-stock
Toshiba Semiconductor MOSFET   4 V SMD/SMT     + 150 C     1 Channel 1.6 mm 0.8 mm 0.7 mm 100 mW Single Si N-Channel 20 V 180 mA 3 Ohms 400 mV Enhancement     1 N-Channel 300 ns 115 ns                            
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